scholarly journals Effect of organic gate dielectric material properties on interfacial charging and discharging of pentacene MIM device

2011 ◽  
Vol 14 ◽  
pp. 62-66 ◽  
Author(s):  
Kateryna Bazaka ◽  
Mohan V. Jacob ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Material Properties ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Gate Dielectric Material

Effects of the Gate Dielectric Material on the Performance of a 14-nm SOI FinFET

2021 ◽  
Author(s):  
Nour El I. Boukortt ◽  
Amal M. AlAmri ◽  
Antonio Garcia Loureiro ◽  
Yaser M. Abdulraheem ◽  
Mozhdeh Seyyedhamzeh ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Dielectric Material ◽  
Gate Dielectric Material

High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies

2003 ◽  
Vol 765 ◽  
Author(s):  
Matty Caymax ◽  
H. Bender ◽  
B. Brijs ◽  
T. Conard ◽  
S. DeGendt ◽  
...  
Keyword(s):  
Physical Vapor Deposition ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Dielectric Constants ◽  
Gate Stack ◽  
Interfacial Layers ◽  
High K ◽  
High K Materials ◽  
Gate Dielectric Material ◽  
Deposition Techniques

AbstractIn the quest for ever smaller transistor dimensions, the well-known and reliable SiO2 gate dielectric material needs to be replaced by alternatives whith higher dielectric constants in order to reduce the gate leakage. Candidate materials are metal oxides such as HfO2. Themost promising deposition techniques, next to Physical Vapor Deposition, appear to be ALCVD and MOCVD. In this paper, we compare the most important characteristics of layers from both proces techniques and assess their relevance to gate stack applications: density, crystallisation, impurities, growth mechanism, interfacial layers, dielectric constant, mobility. Although we find some minor differences, layers from both techniques mostly show striking similarities in many aspects, both positive and negative.

High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers

2016 ◽  
Vol 16 (4) ◽  
pp. 3273-3276 ◽  
Author(s):  
Yu Matsuda ◽  
Yoshio Nakahara ◽  
Daisuke Michiura ◽  
Kazuyuki Uno ◽  
Ichiro Tanaka
Keyword(s):  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Low Cost ◽  
High Mobility ◽  
Hole Mobility ◽  
Plastic Substrates ◽  
Active Layers ◽  
Dielectric Layers ◽  
Gate Dielectric Material

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78±0.3 cm2V−1s−1, which are comparable to those of the previously reported transistors using singlecrystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. It is therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

2016 ◽  
Vol 16 (4) ◽  
pp. 3327-3331 ◽  
Author(s):  
Hideto Shibao ◽  
Yoshio Nakahara ◽  
Kazuyuki Uno ◽  
Ichiro Tanaka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Uv Light ◽  
Limiting Factor ◽  
Dielectric Layers ◽  
Linker Molecules ◽  
Gate Dielectric Material

Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-light cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

Graphene Adsorbed on Corundum Surface: Clean Interface and Band Gap Opening

2012 ◽  
Vol 1407 ◽  
Author(s):  
Bing Huang ◽  
Qiang Xu ◽  
Su-Huai Wei
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
First Principles Calculations ◽  
Structural And Electronic Properties ◽  
Gap Opening ◽  
Clean Interface ◽  
Injection Barrier ◽  
Gate Dielectric Material

ABSTRACTUsing advanced first-principles calculations, we have studied the structural and electronic properties of graphene/α-Al2O3 interfaces and show that α -Al2O3 is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence band offsets for these systems are large enough to create injection barrier. Remarkably, a band gap of ~180 meV can be induced in graphene layer adsorbed on Al-terminated surface, which is significantly larger than graphene on other popular substrates.

Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- $k$ Gate Dielectric Material

2009 ◽  
Vol 30 (5) ◽  
pp. 484-486 ◽  
Author(s):  
H.N. Raval ◽  
S.P. Tiwari ◽  
R.R. Navan ◽  
S.G. Mhaisalkar ◽  
V.R. Rao
Keyword(s):  
Gate Dielectric ◽  
Dielectric Material ◽  
Solution Processed ◽  
High K ◽  
Gate Dielectric Material ◽  
High K Gate Dielectric
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