Earthquake lights and the stress-activation of positive hole charge carriers in rocks

2006 ◽  
Vol 31 (4-9) ◽  
pp. 305-312 ◽  
Author(s):  
France St-Laurent ◽  
John S. Derr ◽  
Friedemann T. Freund
Keyword(s):  
Charge Carriers ◽  
Hole Charge ◽  
Positive Hole ◽  
Stress Activation ◽  
Earthquake Lights

scholarly journals MAGNETOACTIVE P-GE ROD WAVEGUIDE LOSS ANALYSIS ON THE CONCENTRATION OF TWO COMPONENT HOLE CHARGE CARRIERS / CILINDRINIŲ GIROELEKTRINIŲ P-GE BANGOLAIDŽIŲ NUOSTOLIŲ PRIKLAUSOMYBĖS NUO DVIEJŲ RŪŠIŲ KRŪVININKŲ KONCENTRACIJOS TYRIMAS

2012 ◽  
Vol 4 (1) ◽  
pp. 77-80
Author(s):  
Artūras Bubnelis
Keyword(s):  
Heavy Hole ◽  
Hole Concentration ◽  
Charge Carriers ◽  
Dispersion Characteristics ◽  
Main Mode ◽  
Higher Modes ◽  
Loss Analysis ◽  
Waveguide Loss ◽  
Hole Charge ◽  
Two Component

A new algorithm is utilized to examine the phase and attenuation constants of open dissipative epsilon- and (or) mu-gyrotropic rod waveguides. Our algorithm allows analyzing the waveguides made of materials having very high losses. The dispersion characteristics of p-Ge with a waveguide of two component hole charge carriers are calculated when the ratio of heavy hole concentration in the material is equal to 5%, 50% and 95% of the total free carrier concentration. The effective mass of p-Ge heavy and light holes are 0.279me and 0.043me respectively. The dispersion characteristics of the main and eight higher modes are presented in the paper. The transformation of higher hybrid modes at some heavy hole concentrations can be noticed. Waveguide broad bandwidth can be considerably extended due to the fact that the losses of higher modes are larger in comparison to those of the main mode at certain heavy hole concentration. Santrauka Darbe pateikiami dviejų rūšių krūvininkų (lengvųjų ir sunkiųjų skylučių) puslaidininkinių p-Ge giroelektrinių bangolaidžių, kuriuos veikia B 1 0 = r T indukcijos nuolatinis išilginis magnetinis laukas, dispersinių charakteristikų skaičiavimo rezultatai, įvertinant nuostolius bangolaidyje. Skaičiavimo algoritmas leidžia tirti bangolaidžius, pagamintus iš medžiagų, atnešančių labai didelius nuostolius. Tiriamos 1 mm spindulio bangolaidžių dažninės charakteristikos 5–200 GHz dažnių ruože. Laisvųjų krūvininkų koncentracija bangolaidyje yra N = 5·1019 m–3. Nustatoma nuostolių priklausomybė nuo sunkiųjų skylučių krūvininkų koncentracijos Nh, esant trims skirtingoms sunkiųjų skylučių koncentracijoms, kai Nh sudaro 5 %, 50 % ir 95 % nuo visų krūvininkų koncentracijos N bangolaidyje.

scholarly journals Descriptors for Electron and Hole Charge Carriers in Metal Oxides

2019 ◽  
Author(s):  
Daniel Davies ◽  
Christopher Savory ◽  
Jarvist Moore Frost ◽  
David Scanlon ◽  
Benjamin Morgan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Small Polaron ◽  
High Mobility ◽  
Charge Carriers ◽  
Oxide Semiconductors ◽  
Hole Charge ◽  
Electron Phonon Coupling ◽  
Carrier Effective Mass ◽  
P Type

<div> <div> <div> <p>Metal oxides can act as insulators, semiconductors or metals depending on their chemical composition and crystal structure. Metal oxide semiconductors, which support equilibrium populations of electron and hole charge carriers, have widespread applications including batteries, solar cells, and display technologies. It is often difficult to predict in advance whether these materials will exhibit localized or delocalized charge carriers upon oxidation or reduction. We combine data from first-principles calculations of the electronic structure and dielectric response of 214 metal oxides to predict the energetic driving force for carrier localization and transport. We assess descriptors based on the carrier effective mass, static polaron binding energy, and Frohlich electron–phonon coupling. Numerical analysis allows us to assign p and n type transport of a metal oxide to three classes: (i) band transport with high mobility; (ii) small polaron transport with low mobility; and (iii) intermediate behaviour. The results of this classification agree with observations regarding carrier dynamics and lifetimes and are used to predict 10 candidate p-type oxides. </p> </div> </div> </div>

scholarly journals Descriptors for Electron and Hole Charge Carriers in Metal Oxides

2019 ◽  
Vol 11 (2) ◽  
pp. 438-444 ◽  
Author(s):  
Daniel W. Davies ◽  
Christopher N. Savory ◽  
Jarvist M. Frost ◽  
David O. Scanlon ◽  
Benjamin J. Morgan ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Charge Carriers ◽  
Hole Charge

The Magnetoactive p-Ge Rod Waveguide Loss Analysis on the Concen-tration of Two Component Hole Charge Carriers

1970 ◽  
Vol 110 (4) ◽  
pp. 53-56 ◽  
Author(s):  
L. Nickelson ◽  
A. Bubnelis ◽  
A. Baskys ◽  
R. Navickas
Keyword(s):  
Free Carrier ◽  
Charge Carriers ◽  
Dispersion Characteristics ◽  
Main Mode ◽  
Loss Analysis ◽  
Waveguide Loss ◽  
Hole Charge ◽  
Two Component ◽  
Mode Loss ◽  
Very High

In this work are examined the phase and attenuation constants of open magnetoactive p-Ge rod waveguides. Our algorithm allows ana-lyzing the very high waveguide losses. Dispersion characteristics of p-Ge with two component hole charge carriers waveguide are calculated when the ratio of heavy holes' concentration in the material is equal to 10%, 30% and 90% of the total free carrier concentration. Dispersion characteristics of the main helicon and eight higher helicon modes are presented here. There are the degeneration and the transformation of higher hybrid modes at some heavy holes' concentrations. The waveguide broadbandwidth can be considerably extended due to the fact that the losses of the higher modes are considerably larger in comparisons to the main mode loss at the certain heavy holes' concentration. Ill. 6, bibl. 12 (in English; abstracts in English and Lithuanian).http://dx.doi.org/10.5755/j01.eee.110.4.286

scholarly journals Hybrid Charge-Transfer Semiconductors: (C7H7)SbI4, (C7H7)BiI4, and Their Halide Congeners

2019 ◽  
Author(s):  
Iain Oswald ◽  
Eve M. Mozur ◽  
Ian P. Moseley ◽  
Hyochul Ahn ◽  
James R. Neilson
Keyword(s):  
Visible Region ◽  
Charge Carriers ◽  
Electronic Band ◽  
Hole Charge ◽  
Optical And Electronic Properties ◽  
The Family ◽  
Low Dimensional ◽  
New Compounds ◽  
Dimensional Crystal ◽  
Inorganic Components

<p>The family of hybrid metal-halide semiconductors (C<sub>7</sub>H<sub>7</sub>)MX<sub>4</sub> (M = Bi<sup>3+</sup>, Sb<sup>3+</sup>; X = Cl<sup>–</sup>, Br<sup>–</sup>, I<sup>–</sup>) was synthesized. The optical and electronic properties of the new compounds were elucidated, revealing electronic band gaps that span the visible region. The tropylium cations stack into columns separated by chains of edge-sharing M-X octahedra to yield a low dimensional crystal structure with electron and hole charge carriers confined to the organic and inorganic components, respectively.</p>

scholarly journals Descriptors for Electron and Hole Charge Carriers in Metal Oxides

2019 ◽  
Author(s):  
Daniel Davies ◽  
Christopher Savory ◽  
Jarvist Moore Frost ◽  
David Scanlon ◽  
Benjamin Morgan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Small Polaron ◽  
High Mobility ◽  
Charge Carriers ◽  
Oxide Semiconductors ◽  
Hole Charge ◽  
Electron Phonon Coupling ◽  
Carrier Effective Mass ◽  
P Type

<div> <div> <div> <p>Metal oxides can act as insulators, semiconductors or metals depending on their chemical composition and crystal structure. Metal oxide semiconductors, which support equilibrium populations of electron and hole charge carriers, have widespread applications including batteries, solar cells, and display technologies. It is often difficult to predict in advance whether these materials will exhibit localized or delocalized charge carriers upon oxidation or reduction. We combine data from first-principles calculations of the electronic structure and dielectric response of 214 metal oxides to predict the energetic driving force for carrier localization and transport. We assess descriptors based on the carrier effective mass, static polaron binding energy, and Frohlich electron–phonon coupling. Numerical analysis allows us to assign p and n type transport of a metal oxide to three classes: (i) band transport with high mobility; (ii) small polaron transport with low mobility; and (iii) intermediate behaviour. The results of this classification agree with observations regarding carrier dynamics and lifetimes and are used to predict 10 candidate p-type oxides. </p> </div> </div> </div>

The dependence of open cylindrical magnetoactive p-Ge and p-Si plasma waveguide mode cutoff frequencies on hole concentrations

2009 ◽  
Vol 75 (1) ◽  
pp. 35-51 ◽  
Author(s):  
L. NICKELSON ◽  
S. ASMONTAS ◽  
V. MALISAUSKAS ◽  
R. MARTAVICIUS
Keyword(s):  
Hole Concentration ◽  
Cutoff Frequency ◽  
Charge Carriers ◽  
Plasma Waveguide ◽  
Main Mode ◽  
Cutoff Frequencies ◽  
Hole Charge ◽  
Two Component ◽  
Open Circular ◽  
Mode Cutoff

AbstractIn this article we give the solution of Maxwell's equations for the open circular cylindrical magnetoactive semiconductor plasma (-gyrotropy) waveguides. We describe the method that allowed us to arrive at a dispersion equation for the electrodynamical analyses of open circular cylindrical plasma (OCCP) waveguides. We numerically investigate the main and two higher modes' dispersion characteristics of p-Ge and p-Si waveguides placed in an external constant longitudinal magnetic field at several concentrations of two component hole charge carriers. We analyse the cutoff frequency and other electrodynamical characteristics of helicon modes with the left-handed (e+iϕ) circular polarization. We discover that the cutoff frequencies of the main mode and the working frequency range of OCCP p-Ge and p-Si waveguides are moving continuously towards the direction of higher frequencies when the hole concentration is increasing. We determine that the central frequency of the p-Si plasma waveguide is higher and its broadbandwidth is larger compared with the analogical p-Ge waveguide. We also numerically investigate the helicon mode cutoff frequencies of the infinitive p-Ge and p-Si plasma at several concentrations of two component hole charge carriers. We compare the cutoff frequencies of the helicon modes propagating in the infinite plasma and in the OCCP waveguides.

scholarly journals Hybrid Charge-Transfer Semiconductors: (C7H7)SbI4, (C7H7)BiI4, and Their Halide Congeners

2019 ◽  
Author(s):  
Iain Oswald ◽  
Eve M. Mozur ◽  
Ian P. Moseley ◽  
Hyochul Ahn ◽  
James R. Neilson
Keyword(s):  
Visible Region ◽  
Charge Carriers ◽  
Electronic Band ◽  
Hole Charge ◽  
Optical And Electronic Properties ◽  
The Family ◽  
Low Dimensional ◽  
New Compounds ◽  
Dimensional Crystal ◽  
Inorganic Components

<p>The family of hybrid metal-halide semiconductors (C<sub>7</sub>H<sub>7</sub>)MX<sub>4</sub> (M = Bi<sup>3+</sup>, Sb<sup>3+</sup>; X = Cl<sup>–</sup>, Br<sup>–</sup>, I<sup>–</sup>) was synthesized. The optical and electronic properties of the new compounds were elucidated, revealing electronic band gaps that span the visible region. The tropylium cations stack into columns separated by chains of edge-sharing M-X octahedra to yield a low dimensional crystal structure with electron and hole charge carriers confined to the organic and inorganic components, respectively.</p>

Detector strategies for environmental scanning electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1296-1297
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Vacuum ◽  
Environmental Scanning Electron Microscopy ◽  
Charge Carriers ◽  
Environmental Scanning ◽  
Surface Information ◽  
X Ray ◽  
Detector Electrode ◽  
Electrons And Ions ◽  
Low Energy Electrons ◽  
Environmental Sem

Environmental SEM operate at specimen chamber pressures of ∼20 torr (2.7 kPa) allowing stabilization of liquid water at room temperature, working on rugged insulators, and generation of an environmental secondary electron (ESE) signal. All signals available in conventional high vacuum instruments are also utilized in the environmental SEM, including BSE, SE, absorbed current, CL, and X-ray. In addition, the ESEM allows utilization of the flux of charge carriers as information, providing exciting new signal modes not available to BSE imaging or to conventional high vacuum SEM.In the ESEM, at low vacuum, SE electrons are collected with a “gaseous detector”. This detector collects low energy electrons (and ions) with biased wires or plates similar to those used in early high vacuum SEM for SE detection. The detector electrode can be integrated into the first PLA or positioned at any other place resulting in a versatile system that provides a variety of surface information.

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