scholarly journals Activation of hole charge carriers and generation of electromotive force in gabbro blocks subjected to nonuniform loading

2013 ◽  
Vol 118 (3) ◽  
pp. 915-925 ◽  
Author(s):  
Akihiro Takeuchi ◽  
Toshiyasu Nagao
Keyword(s):  
Electromotive Force ◽  
Charge Carriers ◽  
Hole Charge ◽  
Nonuniform Loading

Composition-Dependent Electrical Conductivity of Ionic-Electronic Composite

1997 ◽  
Vol 500 ◽  
Author(s):  
M. Park ◽  
G. M. Choi
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Electromotive Force ◽  
Composition Dependence ◽  
Force Measurement ◽  
Ionic Transport ◽  
Charge Carriers ◽  
Stabilized Zirconia ◽  
Ionic Charge ◽  
Polarization Technique

ABSTRACTComposition. dependence of electrical conductivity of ionic-electronic composite was camined using yttria(8mol%) stabilized zirconia-NiO composites. The contributions of ectronic and ionic charge carriers to the electrical conductivity were determined by Hebb-Vagner polarization technique and electromotive force measurement of galvanic cell. Up to 6 sol% NiO addition, the conductivity decreased since the electronic NiO acted as an insulator in onic matrix. However the ionic transport was dominant until NiO content reaches 26 vol%. Mixed conduction was observed between 26 and 68 vol% of NiO. The effects of composition on he electrical properties were explained by the microstructure and thus by the distribution of two hases.

scholarly journals MAGNETOACTIVE P-GE ROD WAVEGUIDE LOSS ANALYSIS ON THE CONCENTRATION OF TWO COMPONENT HOLE CHARGE CARRIERS / CILINDRINIŲ GIROELEKTRINIŲ P-GE BANGOLAIDŽIŲ NUOSTOLIŲ PRIKLAUSOMYBĖS NUO DVIEJŲ RŪŠIŲ KRŪVININKŲ KONCENTRACIJOS TYRIMAS

2012 ◽  
Vol 4 (1) ◽  
pp. 77-80
Author(s):  
Artūras Bubnelis
Keyword(s):  
Heavy Hole ◽  
Hole Concentration ◽  
Charge Carriers ◽  
Dispersion Characteristics ◽  
Main Mode ◽  
Higher Modes ◽  
Loss Analysis ◽  
Waveguide Loss ◽  
Hole Charge ◽  
Two Component

A new algorithm is utilized to examine the phase and attenuation constants of open dissipative epsilon- and (or) mu-gyrotropic rod waveguides. Our algorithm allows analyzing the waveguides made of materials having very high losses. The dispersion characteristics of p-Ge with a waveguide of two component hole charge carriers are calculated when the ratio of heavy hole concentration in the material is equal to 5%, 50% and 95% of the total free carrier concentration. The effective mass of p-Ge heavy and light holes are 0.279me and 0.043me respectively. The dispersion characteristics of the main and eight higher modes are presented in the paper. The transformation of higher hybrid modes at some heavy hole concentrations can be noticed. Waveguide broad bandwidth can be considerably extended due to the fact that the losses of higher modes are larger in comparison to those of the main mode at certain heavy hole concentration. Santrauka Darbe pateikiami dviejų rūšių krūvininkų (lengvųjų ir sunkiųjų skylučių) puslaidininkinių p-Ge giroelektrinių bangolaidžių, kuriuos veikia B 1 0 = r T indukcijos nuolatinis išilginis magnetinis laukas, dispersinių charakteristikų skaičiavimo rezultatai, įvertinant nuostolius bangolaidyje. Skaičiavimo algoritmas leidžia tirti bangolaidžius, pagamintus iš medžiagų, atnešančių labai didelius nuostolius. Tiriamos 1 mm spindulio bangolaidžių dažninės charakteristikos 5–200 GHz dažnių ruože. Laisvųjų krūvininkų koncentracija bangolaidyje yra N = 5·1019 m–3. Nustatoma nuostolių priklausomybė nuo sunkiųjų skylučių krūvininkų koncentracijos Nh, esant trims skirtingoms sunkiųjų skylučių koncentracijoms, kai Nh sudaro 5 %, 50 % ir 95 % nuo visų krūvininkų koncentracijos N bangolaidyje.

scholarly journals Descriptors for Electron and Hole Charge Carriers in Metal Oxides

2019 ◽  
Author(s):  
Daniel Davies ◽  
Christopher Savory ◽  
Jarvist Moore Frost ◽  
David Scanlon ◽  
Benjamin Morgan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Small Polaron ◽  
High Mobility ◽  
Charge Carriers ◽  
Oxide Semiconductors ◽  
Hole Charge ◽  
Electron Phonon Coupling ◽  
Carrier Effective Mass ◽  
P Type

<div> <div> <div> <p>Metal oxides can act as insulators, semiconductors or metals depending on their chemical composition and crystal structure. Metal oxide semiconductors, which support equilibrium populations of electron and hole charge carriers, have widespread applications including batteries, solar cells, and display technologies. It is often difficult to predict in advance whether these materials will exhibit localized or delocalized charge carriers upon oxidation or reduction. We combine data from first-principles calculations of the electronic structure and dielectric response of 214 metal oxides to predict the energetic driving force for carrier localization and transport. We assess descriptors based on the carrier effective mass, static polaron binding energy, and Frohlich electron–phonon coupling. Numerical analysis allows us to assign p and n type transport of a metal oxide to three classes: (i) band transport with high mobility; (ii) small polaron transport with low mobility; and (iii) intermediate behaviour. The results of this classification agree with observations regarding carrier dynamics and lifetimes and are used to predict 10 candidate p-type oxides. </p> </div> </div> </div>

scholarly journals Descriptors for Electron and Hole Charge Carriers in Metal Oxides

2019 ◽  
Vol 11 (2) ◽  
pp. 438-444 ◽  
Author(s):  
Daniel W. Davies ◽  
Christopher N. Savory ◽  
Jarvist M. Frost ◽  
David O. Scanlon ◽  
Benjamin J. Morgan ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Charge Carriers ◽  
Hole Charge

scholarly journals Генерация носителей заряда в пленках кремний--германий, сильно легированных титаном, при их однородном нагреве

2018 ◽  
Vol 44 (8) ◽  
pp. 42
Author(s):  
Ш.К. Кучканов ◽  
Х.Б. Ашуров
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electromotive Force ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Charge Carriers ◽  
Silicon Substrates ◽  
Heavily Doped ◽  
P Type ◽  
Short Circuit Currents

AbstractWe have studied the generation of charge carriers and development of the electromotive force (emf) in uniformly heated n -type Si–Ge films heavily doped with titanium obtained by chemical-vapor deposition on p -type silicon substrates. A maximum emf value of ∼3 mV was observed at temperatures within 500–600 K for dark short-circuit currents ∼0.5–1 μA, the value of which increased with the temperature to reach ∼3 μA at 800 K.

scholarly journals Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

Coatings ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 433 ◽  
Author(s):  
Igor Pronin ◽  
Nadejda Yakushova ◽  
Igor Averin ◽  
Andrey Karmanov ◽  
Vyacheslav Moshnikov ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electromotive Force ◽  
Critical Level ◽  
Sol Gel ◽  
Charge Carriers ◽  
Bohr Radius ◽  
Free Carriers ◽  
Physical Mechanisms ◽  
Thermovoltaic Effect ◽  
Endothermic Process

A model of the thermovoltaic effect emergence in ZnO/ZnO (Me = Cu, Fe), sandwich structures has been developed in the article. The samples were made by the sol-gel method. When they were uniformly heated in a laboratory furnace in the temperature range of 200–300 °C, there an electromotive force (EMF) of −7~10 mV, not associated with the Seebeck effect, emerged. The developed physical mechanisms of the effect emergence consist of the following well-known fact: iron and copper coexist in zinc oxide in two states, namely, Fe2+ and Fe3+ (donor), and Cu2+ and Cu+ (acceptor). During the heating of the ZnO/ZnO–Me system, the concentration of charge carriers in the layers will increase, while in the upper layer its value will be larger because of the presence of electrically active impurities. At room temperatures, Coulomb forces retain an electron that is located on the Fe2+ ion, as well as a hole on Cu2+ ion, and the main states undergo ionization. However, as the temperature increases, the carrier concentration can reach a critical level, when they can screen the ion charge (the Debye screening radius decreases to the Bohr radius of the impurity). In this case, an abrupt collective endothermic process of ionization of multivalent impurities takes place, accompanied by the appearance of a concentration gradient of free carriers in the sample, and accordingly, the emergence of an electromotive force. Quantitative calculations of the critical temperature, at which the onset of EMF generation is observed, performed within the framework of the developed models.

The Magnetoactive p-Ge Rod Waveguide Loss Analysis on the Concen-tration of Two Component Hole Charge Carriers

1970 ◽  
Vol 110 (4) ◽  
pp. 53-56 ◽  
Author(s):  
L. Nickelson ◽  
A. Bubnelis ◽  
A. Baskys ◽  
R. Navickas
Keyword(s):  
Free Carrier ◽  
Charge Carriers ◽  
Dispersion Characteristics ◽  
Main Mode ◽  
Loss Analysis ◽  
Waveguide Loss ◽  
Hole Charge ◽  
Two Component ◽  
Mode Loss ◽  
Very High

In this work are examined the phase and attenuation constants of open magnetoactive p-Ge rod waveguides. Our algorithm allows ana-lyzing the very high waveguide losses. Dispersion characteristics of p-Ge with two component hole charge carriers waveguide are calculated when the ratio of heavy holes' concentration in the material is equal to 10%, 30% and 90% of the total free carrier concentration. Dispersion characteristics of the main helicon and eight higher helicon modes are presented here. There are the degeneration and the transformation of higher hybrid modes at some heavy holes' concentrations. The waveguide broadbandwidth can be considerably extended due to the fact that the losses of the higher modes are considerably larger in comparisons to the main mode loss at the certain heavy holes' concentration. Ill. 6, bibl. 12 (in English; abstracts in English and Lithuanian).http://dx.doi.org/10.5755/j01.eee.110.4.286

scholarly journals Hybrid Charge-Transfer Semiconductors: (C7H7)SbI4, (C7H7)BiI4, and Their Halide Congeners

2019 ◽  
Author(s):  
Iain Oswald ◽  
Eve M. Mozur ◽  
Ian P. Moseley ◽  
Hyochul Ahn ◽  
James R. Neilson
Keyword(s):  
Visible Region ◽  
Charge Carriers ◽  
Electronic Band ◽  
Hole Charge ◽  
Optical And Electronic Properties ◽  
The Family ◽  
Low Dimensional ◽  
New Compounds ◽  
Dimensional Crystal ◽  
Inorganic Components

<p>The family of hybrid metal-halide semiconductors (C<sub>7</sub>H<sub>7</sub>)MX<sub>4</sub> (M = Bi<sup>3+</sup>, Sb<sup>3+</sup>; X = Cl<sup>–</sup>, Br<sup>–</sup>, I<sup>–</sup>) was synthesized. The optical and electronic properties of the new compounds were elucidated, revealing electronic band gaps that span the visible region. The tropylium cations stack into columns separated by chains of edge-sharing M-X octahedra to yield a low dimensional crystal structure with electron and hole charge carriers confined to the organic and inorganic components, respectively.</p>

scholarly journals Descriptors for Electron and Hole Charge Carriers in Metal Oxides

2019 ◽  
Author(s):  
Daniel Davies ◽  
Christopher Savory ◽  
Jarvist Moore Frost ◽  
David Scanlon ◽  
Benjamin Morgan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Small Polaron ◽  
High Mobility ◽  
Charge Carriers ◽  
Oxide Semiconductors ◽  
Hole Charge ◽  
Electron Phonon Coupling ◽  
Carrier Effective Mass ◽  
P Type

<div> <div> <div> <p>Metal oxides can act as insulators, semiconductors or metals depending on their chemical composition and crystal structure. Metal oxide semiconductors, which support equilibrium populations of electron and hole charge carriers, have widespread applications including batteries, solar cells, and display technologies. It is often difficult to predict in advance whether these materials will exhibit localized or delocalized charge carriers upon oxidation or reduction. We combine data from first-principles calculations of the electronic structure and dielectric response of 214 metal oxides to predict the energetic driving force for carrier localization and transport. We assess descriptors based on the carrier effective mass, static polaron binding energy, and Frohlich electron–phonon coupling. Numerical analysis allows us to assign p and n type transport of a metal oxide to three classes: (i) band transport with high mobility; (ii) small polaron transport with low mobility; and (iii) intermediate behaviour. The results of this classification agree with observations regarding carrier dynamics and lifetimes and are used to predict 10 candidate p-type oxides. </p> </div> </div> </div>

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