scholarly journals All ink-jet printed low-voltage organic field-effect transistors on flexible substrate

2016 ◽  
Vol 38 ◽  
pp. 186-192 ◽  
Author(s):  
Linrun Feng ◽  
Chen Jiang ◽  
Hanbin Ma ◽  
Xiaojun Guo ◽  
Arokia Nathan
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Organic Field Effect Transistors ◽  
Ink Jet

Critical Factors to Achieve Low Voltage- and Capacitance-Based Organic Field-Effect Transistors

2013 ◽  
Vol 26 (2) ◽  
pp. 288-292 ◽  
Author(s):  
Mi Jang ◽  
Ji Hoon Park ◽  
Seongil Im ◽  
Se Hyun Kim ◽  
Hoichang Yang
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Critical Factors

Stability improvement in flexible low-voltage organic field-effect transistors with complementary polymeric dielectrics

2019 ◽  
Vol 65 ◽  
pp. 259-265 ◽  
Author(s):  
Haifeng Ling ◽  
Dequn Wu ◽  
Tao Wang ◽  
Xudong Chen ◽  
Mingdong Yi ◽  
...  
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Polymeric Dielectrics

Highly stable flexible organic field-effect transistors with Parylene-C gate dielectrics on a flexible substrate

2019 ◽  
Vol 75 ◽  
pp. 105391 ◽  
Author(s):  
Hyeok-jin Kwon ◽  
Heqing Ye ◽  
Tae Kyu An ◽  
Jisu Hong ◽  
Chan Eon Park ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Organic Field Effect Transistors ◽  
Parylene C

Flexible organic field-effect transistors fabricated by the electrode-peeling transfer

2003 ◽  
Vol 769 ◽  
Author(s):  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Solid Substrate ◽  
Semiconductor Material ◽  
Organic Field Effect Transistors ◽  
Gate Electrode ◽  
Micro Patterning

AbstractWe report a simple and mild fabrication of flexible organic field-effect transistors (OFETs) by an electrode-peeling transfer method. Firstly, fine patterns of source-drain metal electrodes were formed on a solid substrate, where a micro-patterning process such as photolithography is applicable. An organic dielectric layer (poly-chloro-p-xylylene) was deposited by a chemical vapor deposition. Then patterned gate electrode was deposited using a shadow mask. On the top surface of the gate electrode, another adhesive flexible substrate was fixed and the stack of the flexible substrate/gate electrode /dielectric layer /source-drain electrode was peeled away from the solid substrate. The peeling-transfer was completed with a help of a self-assembled monolayer of n-decyl mercaptan as a connecting buffer layer between the gold electrodes and the dielectric layer. Then an organic semiconductor material was deposited on the fresh peeled-off surface on the flexible substrate. When pentacene was used as the semiconductor material, the OFETs exhibited a hole mobility of 0.1 cm2/Vs and a current on/off ratio of 105.

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