Polymers from phenyl-substituted benzodithiophene and tetrafluoridequinoxaline with high open circuit voltage and high fill factor

2016 ◽  
Vol 37 ◽  
pp. 287-293 ◽  
Author(s):  
Jun Yuan ◽  
Lixia Qiu ◽  
Shutao Xu ◽  
Zhiguo Zhang ◽  
Yongfang Li ◽  
...  
1980 ◽  
Vol 19 (S2) ◽  
pp. 187 ◽  
Author(s):  
Susumu Yoshida ◽  
Kotaro Mitsui ◽  
Takao Oda ◽  
Kiyoshi Shirahata

2010 ◽  
Vol 20 (24) ◽  
pp. 4295-4303 ◽  
Author(s):  
Julia Wagner ◽  
Mark Gruber ◽  
Alexander Hinderhofer ◽  
Andreas Wilke ◽  
Benjamin Bröker ◽  
...  

2014 ◽  
Vol 105 (8) ◽  
pp. 083304 ◽  
Author(s):  
Yuelin Peng ◽  
Lushuai Zhang ◽  
Trisha L. Andrew

1980 ◽  
Vol 19 (S1) ◽  
pp. 563 ◽  
Author(s):  
Susumu Yoshida ◽  
Kotaro Mitsui ◽  
Takao Oda ◽  
Toshio Sogo ◽  
Kiyoshi Shirahata

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.


Solar Energy ◽  
2021 ◽  
Vol 214 ◽  
pp. 26-50
Author(s):  
Qin Chen ◽  
Luyun Bai ◽  
Jadel Tsiba Matondo ◽  
Minghan Deng ◽  
Davy Malouangou Maurice ◽  
...  

MRS Advances ◽  
2019 ◽  
Vol 4 (36) ◽  
pp. 2001-2007
Author(s):  
Enfang He ◽  
Hong Zhang ◽  
Yueyue Gao ◽  
Fengyun Guo ◽  
Shiyong Gao ◽  
...  

ABSTRACT:Two benzodifuran (BDF) polymers, PBDF-C and PBDF-S, with alkyl and alkylthio substituted thiophene side-chains and benzodithiophene-4,8-dione (BDD) as the acceptor were designed and synthesized. Their optical, electrochemical properties and photovoltaic performances were systematically investigated. The polymer solar cells (PSCs) with a device structure of ITO/PEDOT:PSS/polymer:PC71BM/Ca/Al were fabricated. The PBDF-C based device showed a power conversion efficiency (PCE) of 3.01% after adding 1 vol% 1,8-diodooctane (DIO) as the solvent additive, and PBDF-S gave an enhanced PCE of 3.48% without any post-treatments. The enhancements were from the higher open-circuit voltage (Voc) and fill factor (FF). The thermal- and solvent-treatment-free processing is more favourable for the large area roll-to-roll manufacturing or printing technology for PSCs.


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