Improved carrier balance and polarized in-plane light emission at full-channel area in ambipolar heterostructure polymer light-emitting transistors

2016 ◽  
Vol 32 ◽  
pp. 213-219 ◽  
Author(s):  
Takahiro Ohtomo ◽  
Kazuya Hashimoto ◽  
Hitoshi Tanaka ◽  
Yutaka Ohmori ◽  
Masanori Ozaki ◽  
...  
Keyword(s):  
Light Emission ◽  
Light Emitting ◽  
Light Emitting Transistors ◽  
Plane Light

Enhanced ambipolar charge transport for efficient organic single crystal light-emitting transistors with a narrowed ambipolar regime

2020 ◽  
Vol 8 (46) ◽  
pp. 16333-16338
Author(s):  
Ke Zhou ◽  
Jie Liu ◽  
Huanli Dong ◽  
Shang Ding ◽  
Yonggang Zhen ◽  
...  
Keyword(s):  
Energy Level ◽  
Single Crystal ◽  
Charge Transport ◽  
Light Emission ◽  
High Mobility ◽  
Strong Light ◽  
Light Emitting ◽  
Organic Single Crystal ◽  
Light Emitting Transistors

An efficient ambipolar OLET was constructed based on a high-mobility emissive 2,6-diphenylanthracene semiconductor via energy-level engineering, giving a narrowed ambipolar regime with strong light emission.

Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission

2012 ◽  
Vol 13 (9) ◽  
pp. 1742-1749 ◽  
Author(s):  
Xiaoran Li ◽  
Albert J.J.M. van Breemen ◽  
Vsevolod Khikhlovskyi ◽  
Edsger C.P. Smits ◽  
Martijn Kemerink ◽  
...  
Keyword(s):  
Light Emission ◽  
Ferroelectric Polarization ◽  
Light Emitting ◽  
Channel Current ◽  
Light Emitting Transistors

scholarly journals Effect of Laser Irradiation on Emissivity of Flame-Generated Nanooxides

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2303
Author(s):  
Silvana De Iuliis ◽  
Roberto Dondè ◽  
Igor Altman
Keyword(s):  
Laser Irradiation ◽  
Light Emission ◽  
Energy Gap ◽  
Particle Temperature ◽  
Electron Excitation ◽  
Flame Spray ◽  
Energy Bands ◽  
Light Emitting ◽  
Spectral Behavior ◽  
The Difference

The application of pyrometry to retrieve particle temperature in particulate-generating flames strictly requires the knowledge of the spectral behavior of emissivity of light-emitting particles. Normally, this spectral behavior is considered time-independent. The current paper challenges this assumption and explains why the emissivity of oxide nanoparticles formed in flame can change with time. The suggested phenomenon is related to transitions of electrons between the valence and conduction energy bands in oxides that are wide-gap dielectrics. The emissivity change is particularly crucial for the interpretation of fast processes occurring during laser-induced experiments. In the present work, we compare the response of titania particles produced by a flame spray to the laser irradiation at two different excitation wavelengths. The difference in the temporal behavior of the corresponding light emission intensities is attributed to the different mechanisms of electron excitation during the laser pulse. Interband transitions that are possible only in the case of the laser photon energy exceeding the titania energy gap led to the increase of the electron density in the conduction band. Relaxation of those electrons back to the valence band is the origin of the observed emissivity drop after the UV laser irradiation.

Organic Light‐Emitting Transistors Entering a New Development Stage

2021 ◽  
pp. 2007149
Author(s):  
Zhengsheng Qin ◽  
Haikuo Gao ◽  
Huanli Dong ◽  
Wenping Hu
Keyword(s):  
Development Stage ◽  
Light Emitting ◽  
Organic Light ◽  
New Development ◽  
Light Emitting Transistors

scholarly journals Recent advancements and perspectives on light management and high performance in perovskite light-emitting diodes

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Shaoni Kar ◽  
Nur Fadilah Jamaludin ◽  
Natalia Yantara ◽  
Subodh G. Mhaisalkar ◽  
Wei Lin Leong
Keyword(s):  
High Performance ◽  
Light Propagation ◽  
Light Emission ◽  
Review Article ◽  
Rapid Progress ◽  
Light Emitting ◽  
Materials Engineering ◽  
Perovskite Materials ◽  
Light Management ◽  
Photon Recycling

Abstract Perovskite semiconductors have experienced meteoric rise in a variety of optoelectronic applications. With a strong foothold on photovoltaics, much focus now lies on their light emission applications. Rapid progress in materials engineering have led to the demonstration of external quantum efficiencies that surpass the previously established theoretical limits. However, there remains much scope to further optimize the light propagation inside the device stack through careful tailoring of the optical processes that take place at the bulk and interface levels. Photon recycling in the emitter material followed by efficient outcoupling can result in boosting external efficiencies up to 100%. In addition, the poor ambient and operational stability of these materials and devices restrict further commercialization efforts. With best operational lifetimes of only a few hours reported, there is a long way to go before perovskite LEDs can be perceived as reliable alternatives to more established technologies like organic or quantum dot-based LED devices. This review article starts with the discussions of the mechanism of luminescence in these perovskite materials and factors impacting it. It then looks at the possible routes to achieve efficient outcoupling through nanostructuring of the emitter and the substrate. Next, we analyse the instability issues of perovskite-based LEDs from a photophysical standpoint, taking into consideration the underlying phenomena pertaining to defects, and summarize recent advances in mitigating the same. Finally, we provide an outlook on the possible routes forward for the field and propose new avenues to maximally exploit the excellent light-emitting capabilities of this family of semiconductors.

scholarly journals Synaptic Plasticity Powering Long‐Afterglow Organic Light‐Emitting Transistors

2021 ◽  
pp. 2103369
Author(s):  
Yusheng Chen ◽  
Hanlin Wang ◽  
Yifan Yao ◽  
Ye Wang ◽  
Chun Ma ◽  
...  
Keyword(s):  
Synaptic Plasticity ◽  
Light Emitting ◽  
Long Afterglow ◽  
Organic Light ◽  
Light Emitting Transistors
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