In-plane light emission of organic light-emitting transistors with bilayer structure using ambipolar semiconducting polymers

2015 ◽  
Vol 16 ◽  
pp. 26-33 ◽  
Author(s):  
Hirotake Kajii ◽  
Hitoshi Tanaka ◽  
Yusuke Kusumoto ◽  
Takahiro Ohtomo ◽  
Yutaka Ohmori
Keyword(s):  
Light Emission ◽  
Semiconducting Polymers ◽  
Bilayer Structure ◽  
Light Emitting ◽  
Organic Light ◽  
Light Emitting Transistors ◽  
Plane Light

Improved carrier balance and polarized in-plane light emission at full-channel area in ambipolar heterostructure polymer light-emitting transistors

2016 ◽  
Vol 32 ◽  
pp. 213-219 ◽  
Author(s):  
Takahiro Ohtomo ◽  
Kazuya Hashimoto ◽  
Hitoshi Tanaka ◽  
Yutaka Ohmori ◽  
Masanori Ozaki ◽  
...  
Keyword(s):  
Light Emission ◽  
Light Emitting ◽  
Light Emitting Transistors ◽  
Plane Light

Organic Light‐Emitting Transistors Entering a New Development Stage

2021 ◽  
pp. 2007149
Author(s):  
Zhengsheng Qin ◽  
Haikuo Gao ◽  
Huanli Dong ◽  
Wenping Hu
Keyword(s):  
Development Stage ◽  
Light Emitting ◽  
Organic Light ◽  
New Development ◽  
Light Emitting Transistors

scholarly journals Synaptic Plasticity Powering Long‐Afterglow Organic Light‐Emitting Transistors

2021 ◽  
pp. 2103369
Author(s):  
Yusheng Chen ◽  
Hanlin Wang ◽  
Yifan Yao ◽  
Ye Wang ◽  
Chun Ma ◽  
...  
Keyword(s):  
Synaptic Plasticity ◽  
Light Emitting ◽  
Long Afterglow ◽  
Organic Light ◽  
Light Emitting Transistors

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations

Small ◽  
2016 ◽  
Vol 12 (10) ◽  
pp. 1252-1294 ◽  
Author(s):  
Congcong Zhang ◽  
Penglei Chen ◽  
Wenping Hu
Keyword(s):  
Light Emitting ◽  
Organic Light ◽  
Light Emitting Transistors

Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode

2019 ◽  
Vol 19 (11) ◽  
pp. 6995-7003 ◽  
Author(s):  
Mohd Arif Mohd Sarjidan ◽  
Ahmad Shuhaimi ◽  
Wan Haliza Abd. Majid
Keyword(s):  
Gate Voltage ◽  
Silver Nanowires ◽  
Silver Nanowire ◽  
Morphological Properties ◽  
Semiconductor Layer ◽  
Small Magnitude ◽  
Light Emitting ◽  
Organic Light ◽  
Light Emitting Transistors ◽  
Source Electrode

A simple spin-coating process for fabricating vertical organic light-emitting transistors (VOLETs) is realized by utilizing silver nanowire (AgNW) as a source electrode. The optical, electrical and morphological properties of the AgNW formation was initially optimized, prior VOFET fabrication. A high molecular weight of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] MEH-PPV was used as an organic semiconductor layer in the VOFET in forming a multilayer structure by solution process. It was found that current density and luminance intensity of the VOLET can be modulated by a small magnitude of gate voltage. The modulation process was induced by changing an injection barrier via gate voltage bias. A space-charge-limited current (SCLC) approach in determining transistor mobility has been introduced. This preliminary and fundamental work is beneficial towards all-solution processing display devices.

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