Fabrication of KTa0.65Nb0.35O3 film by pulsed laser deposition on glass substrate with various buffer layers

2011 ◽  
Vol 34 (1) ◽  
pp. 269-273 ◽  
Author(s):  
C.H. Jung ◽  
M.S. Choi ◽  
K.S. Lee ◽  
D.H. Yoon
1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.


Author(s):  
Rama M. Nekkanti ◽  
Paul N. Barnes ◽  
Lyle B. Brunke ◽  
Timothy J. Haugan ◽  
Nick A. Yust ◽  
...  

2007 ◽  
Vol 463-465 ◽  
pp. 615-618 ◽  
Author(s):  
A. Nakai ◽  
J. Matsuda ◽  
Y. Sutoh ◽  
Y. Kitoh ◽  
M. Yoshizumi ◽  
...  

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