Growth conditions of buffer layers on textured NiW substrates by pulsed-laser deposition

2007 ◽  
Vol 463-465 ◽  
pp. 615-618 ◽  
Author(s):  
A. Nakai ◽  
J. Matsuda ◽  
Y. Sutoh ◽  
Y. Kitoh ◽  
M. Yoshizumi ◽  
...  
1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.


Author(s):  
Rama M. Nekkanti ◽  
Paul N. Barnes ◽  
Lyle B. Brunke ◽  
Timothy J. Haugan ◽  
Nick A. Yust ◽  
...  

2006 ◽  
Vol 252 (13) ◽  
pp. 4545-4548
Author(s):  
Hyun Woo Chung ◽  
Eun Sun Lee ◽  
Dong Hua Li ◽  
Byung Du Ahn ◽  
Sang Yeol Lee

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31327-31332 ◽  
Author(s):  
K. Wang ◽  
M. H. Tang ◽  
Y. Xiong ◽  
G. Li ◽  
Y. G. Xiao ◽  
...  

Epitaxial growth of colossal magnetoresistive thin films of La0.7Sr0.3MnO3 (LSMO) has been achieved on TiO2-terminated (001) SrTiO3 (STO) single-crystal substrates using PLD (pulsed laser deposition).


2018 ◽  
Vol 35 (4) ◽  
pp. 878-884 ◽  
Author(s):  
P. Potera ◽  
I. Virt ◽  
G. Wisz ◽  
J. Cebulski

Abstract Optical properties of the zinc-cobalt oxide (ZnCoO) layers manufactured at different process conditions have been investigated. ZnCoO layers were grown on sapphire and glass substrates by pulsed laser deposition (PLD) technique. The influence of growth conditions as well as post-growth annealing on the films transmission and gap energy was analyzed.


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