Highly luminescent columnar ZnO films grown directly on n-Si and p-Si substrates by low-temperature electrochemical deposition

2011 ◽  
Vol 33 (6) ◽  
pp. 914-919 ◽  
Author(s):  
Oleg Lupan ◽  
Thierry Pauporté ◽  
V.V. Ursaki ◽  
I.M. Tiginyanu
Keyword(s):  
Low Temperature ◽  
Electrochemical Deposition ◽  
Zno Films ◽  
Si Substrates

Structure and properties of ZnO films grown on Si substrates with low temperature buffer layers

2006 ◽  
Vol 253 (5) ◽  
pp. 2765-2769 ◽  
Author(s):  
Wei Zheng ◽  
Yuan Liao ◽  
Li Li ◽  
Qingxuan Yu ◽  
Guanzhong Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layers ◽  
Zno Films ◽  
Structure And Properties ◽  
Si Substrates

Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates

2012 ◽  
Vol 407 (14) ◽  
pp. 2825-2828 ◽  
Author(s):  
K. Zhang ◽  
M.R. Hao ◽  
W. Guo ◽  
T. Heeg ◽  
D.G. Schlom ◽  
...  
Keyword(s):  
Electron Transport ◽  
Low Temperature ◽  
Zno Films ◽  
Si Substrates ◽  
Temperature Electron ◽  
Doped Zno ◽  
Phosphorus Doped

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature

2009 ◽  
Vol 24 (10) ◽  
pp. 105014 ◽  
Author(s):  
E Przeździecka ◽  
Ł Wachnicki ◽  
W Paszkowicz ◽  
E Łusakowska ◽  
T Krajewski ◽  
...  
Keyword(s):  
Low Temperature ◽  
Structural Properties ◽  
Zno Films

Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates

2013 ◽  
Vol 552 ◽  
pp. 127-130 ◽  
Author(s):  
M. Wei ◽  
R.C. Boutwell ◽  
G.A. Garrett ◽  
K. Goodman ◽  
P. Rotella ◽  
...  
Keyword(s):  
Low Temperature ◽  
Source Parameters ◽  
Zno Films

Plasma Diagnostics and Characterizations of Al-Doped ZnO Films Deposited with Low Temperature Sputtering Process

2013 ◽  
Vol 52 (11S) ◽  
pp. 11NB02 ◽  
Author(s):  
Yoon S. Choi ◽  
Byeong C. Shim ◽  
Hye R. Kim ◽  
Jeon G. Han
Keyword(s):  
Low Temperature ◽  
Plasma Diagnostics ◽  
Zno Films ◽  
Doped Zno

Thin YBa2Cu3O7–x Films Prepared by Low Temperature Coevaporation on Si Substrates Without Buffer Layer

1990 ◽  
Vol 119 (2) ◽  
pp. K155-K158 ◽  
Author(s):  
Š. Chromik ◽  
V. Štrbík ◽  
Š. Beňačka ◽  
R. Adam ◽  
M. Jergel
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Si Substrates

Low-temperature atomic layer deposition of ZnO films on particles in a fluidized bed reactor

2008 ◽  
Vol 516 (23) ◽  
pp. 8517-8523 ◽  
Author(s):  
David M. King ◽  
Xinhua Liang ◽  
Peng Li ◽  
Alan W. Weimer
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Fluidized Bed ◽  
Atomic Layer ◽  
Fluidized Bed Reactor ◽  
Zno Films ◽  
Layer Deposition
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