Structure and properties of ZnO films grown on Si substrates with low temperature buffer layers

2006 ◽  
Vol 253 (5) ◽  
pp. 2765-2769 ◽  
Author(s):  
Wei Zheng ◽  
Yuan Liao ◽  
Li Li ◽  
Qingxuan Yu ◽  
Guanzhong Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layers ◽  
Zno Films ◽  
Structure And Properties ◽  
Si Substrates

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers

2009 ◽  
Vol 94 (12) ◽  
pp. 122107 ◽  
Author(s):  
W. Guo ◽  
M. B. Katz ◽  
C. T. Nelson ◽  
T. Heeg ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Zno Films ◽  
Si Substrates

Highly luminescent columnar ZnO films grown directly on n-Si and p-Si substrates by low-temperature electrochemical deposition

2011 ◽  
Vol 33 (6) ◽  
pp. 914-919 ◽  
Author(s):  
Oleg Lupan ◽  
Thierry Pauporté ◽  
V.V. Ursaki ◽  
I.M. Tiginyanu
Keyword(s):  
Low Temperature ◽  
Electrochemical Deposition ◽  
Zno Films ◽  
Si Substrates

Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 567-570
Author(s):  
Chong Mu Lee ◽  
Anna Park ◽  
Young Joon Cho ◽  
Hyoun Woo Kim ◽  
Jae Gab Lee
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Films ◽  
Zno Thin Film ◽  
Zno Film ◽  
Amorphous Sio2 ◽  
Si Substrates

It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to investigate the cristallinity and surface morphology of the ZnO film. According to the analysis results the crystallinity of a ZnO thin film deposited by rf magnetron sputtering is substantially improved by using a Zn buffer layer. The highest ZnO film quality is obtained with a 110nm thick Zn buffer layer. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

Effect of Buffer Thickness on the Formation of ZnO Nanorods Grown by MOCVD

2007 ◽  
Vol 124-126 ◽  
pp. 101-104
Author(s):  
Dong Chan Kim ◽  
Bo Hyun Kong ◽  
Young Yi Kim ◽  
Hyung Koun Cho ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Large Scale ◽  
Zno Nanorods ◽  
Wide Band ◽  
Buffer Layers ◽  
Zno Films ◽  
Wide Band Gap ◽  
Si Substrates ◽  
Potential Applications ◽  
Zno Buffer Layer ◽  
Zno Semiconductor

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at 400 °C and their effect on the formation of ZnO nanorods at 300 °C was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

The Growth of GaN Films on Si Substrates by HVPE

2005 ◽  
Vol 475-479 ◽  
pp. 3783-3786 ◽  
Author(s):  
Huiqiang Yu ◽  
Lin Chen ◽  
Rong Zhang ◽  
Xiang Qian Xiu ◽  
Zi Li Xie ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Surface Property ◽  
Deposition Temperature ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Si Substrates ◽  
Different Temperatures ◽  
Gan Film

GaN films are grown on Si(111) with low-temperature GaN (LT-GaN) layers as buffer layers by hydride vapor phase epitaxy (HVPE). The LT-GaN layers are deposited at different temperatures ranging from 400 to 900 °C. The surface property, the structure and optical properties of the GaN films with different LT-GaN layers are studied. When deposition temperature of LT-GaN layer is 600 °C, the GaN film shows the best properties.

Effects of nitrogen impurity on zno crystal growth on Si substrates

MRS Advances ◽  
2019 ◽  
Vol 4 (27) ◽  
pp. 1557-1563
Author(s):  
Soichiro Muraoka ◽  
Lyu Jiahao ◽  
Daisuke Yamashita ◽  
Kunihiro Kamataki ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Smooth Surface ◽  
Buffer Layers ◽  
Zno Films ◽  
Secondary Nucleation ◽  
Rocking Curve ◽  
Si Substrates ◽  
Nitrogen Impurity ◽  
Adsorbed Nitrogen ◽  
Zno Crystal

ABSTRACTEffects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

GaInAs / GaAsP buffer layers for low temperature grown GaAs on Si substrates

1993 ◽  
Vol 127 (1-4) ◽  
pp. 116-120 ◽  
Author(s):  
Y. González ◽  
L. González ◽  
F. Briones
Keyword(s):  
Low Temperature ◽  
Buffer Layers ◽  
Si Substrates ◽  
Gaas On Si ◽  
Low Temperature Grown Gaas

MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ZNO FILMS ON SILICON SUBSTRATE WITH ITO BUFFER LAYER

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1764-1770 ◽  
Author(s):  
C.-W. ZOU ◽  
W. GAO
Keyword(s):  
Mechanical Properties ◽  
Buffer Layer ◽  
Mechanical Performance ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Zno Films ◽  
Si Substrates ◽  
Microstructure And Mechanical Properties ◽  
Deformation Behaviors ◽  
Continuous Stiffness Measurement

ZnO thin films were prepared by an unbalanced magnetron sputter on silicon substrates and glass slides. An ITO layer was applied on Si substrate as a buffer layer. Microstructure and mechanical deformation behaviors of the ZnO films were investigated by XRD, SEM and nanoindentation methods. Results showed that ITO buffer layer plays an important role for ZnO heteroepitaxy growth on Si substrates. The strains at the interface induced by the lattice mismatch of Si and ZnO are repressed. As a result, ZnO films with the buffer layers showed larger grain size and better crystallinity. The hardness and modulus of ZnO films with buffer layer decreased. Continuous stiffness measurement (CSM) technique was also used to investigate the effects of buffer layer and substrate materials on the mechanical performance of the prepared ZnO films. The relationship between microstructure and mechanical properties of ZnO films are discussed based on the experimental results.

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