Effect of “buffer layers” on the optical properties of silicon nanocrystal superlattices

2005 ◽  
Vol 27 (5) ◽  
pp. 977-982 ◽  
Author(s):  
M. Glover ◽  
A. Meldrum
Keyword(s):  
Optical Properties ◽  
Buffer Layers ◽  
Silicon Nanocrystal ◽  
Nanocrystal Superlattices

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

scholarly journals Silicon Nanocrystal Superlattices

ChemPhysChem ◽  
2012 ◽  
Vol 14 (1) ◽  
pp. 84-87 ◽  
Author(s):  
Yixuan Yu ◽  
Christian A. Bosoy ◽  
Colin M. Hessel ◽  
Detlef-M. Smilgies ◽  
Brian A. Korgel
Keyword(s):  
Silicon Nanocrystal ◽  
Nanocrystal Superlattices

Birefringence in optical waveguides made by silicon nanocrystal superlattices

2004 ◽  
Vol 85 (7) ◽  
pp. 1268-1270 ◽  
Author(s):  
F. Riboli ◽  
D. Navarro-Urrios ◽  
A. Chiasera ◽  
N. Daldosso ◽  
L. Pavesi ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Silicon Nanocrystal ◽  
Nanocrystal Superlattices

Structural and optical properties of ZnO nanorods grown chemically on sputtered GaN buffer layers

2014 ◽  
Vol 555 ◽  
pp. 122-125 ◽  
Author(s):  
R. Nandi ◽  
Pranav Joshi ◽  
Devendra Singh ◽  
Pravanshu Mohanta ◽  
R.S. Srinivasa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Nanorods ◽  
Buffer Layers ◽  
Structural And Optical Properties

Optical Properties of GaN on Si Substrate Using Plasma-Assisted MOCVD Technique in the Infrared and Visible Regions

2005 ◽  
Vol 480-481 ◽  
pp. 519-524
Author(s):  
M. Roslan Hashim ◽  
S.A. Oh ◽  
Sha Shiong Ng ◽  
Hassan Zainuriah ◽  
Kamarulazizi Ibrahim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapour ◽  
Visible Region ◽  
Infrared Region ◽  
Buffer Layers ◽  
Band Shape ◽  
Growth Technique ◽  
Metalorganic Chemical Vapour Deposition ◽  
Gan On Si ◽  
Aln Buffer

In this paper, we report the characteristics of GaN heteroepitaxial films grown on Si(111)at 700oC using plasma-assisted metalorganic chemical vapour deposition (PA-MOCVD). In this growth technique, H2 plasma was used in addition to N2 plasma. Two sets of samples with different buffer layers were used, i.e. GaN and AlN buffer layers. In the infrared region both samples exhibit similar reststrahlen band shape. However the sample with GaN buffer layer exhibits better optical properties in the visible region compared with its counterpart. This is attributed to its better structural bulk and surface properties.

Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers

2012 ◽  
Vol 51 (3R) ◽  
pp. 031103 ◽  
Author(s):  
Rui Masuda ◽  
Chih-Wei Hsu ◽  
Martin Eriksson ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Sapphire Substrates

Quasi-Fermi-level splitting in ideal silicon nanocrystal superlattices

2011 ◽  
Vol 84 (19) ◽  
Author(s):  
P. Löper ◽  
R. Müller ◽  
D. Hiller ◽  
T. Barthel ◽  
E. Malguth ◽  
...  
Keyword(s):  
Fermi Level ◽  
Silicon Nanocrystal ◽  
Quasi Fermi Level ◽  
Level Splitting ◽  
Nanocrystal Superlattices
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