Measuring optical beam shear angle of polarizing prisms beyond the diffraction limit with localization method

2019 ◽  
Vol 435 ◽  
pp. 227-231 ◽  
Author(s):  
Hoi Chun Chiu ◽  
Zhuohui Zeng ◽  
Luwei Zhao ◽  
Teng Zhao ◽  
Shengwang Du ◽  
...  
Keyword(s):  
Diffraction Limit ◽  
Shear Angle ◽  
Optical Beam ◽  
Localization Method ◽  
Beam Shear

Comparison of Active and Passive Voltage Contrast for Failure Localization

2007 ◽  
Author(s):  
R. Rosenkranz ◽  
W. Werner
Keyword(s):  
Case Studies ◽  
Optical Beam ◽  
Leakage Currents ◽  
Localization Method ◽  
Voltage Contrast ◽  
Failure Localization

Abstract In many cases of failure localization, passive voltage contrast (PVC) localization method does not work, because it is not possible to charge up conducting structures which supposed to be dark in the SEM and FIB images. The reason for this is leakage currents. In this article, the authors show how they succeeded in overcoming these difficulties by the application of the active voltage contrast (AVC) method as it was described as biased voltage contrast by Campbell and Soden. They identified three main cases where the PVC didn't work but where they succeeded in failure localization with the AVC method. This is illustrated with the use of two case studies. Compared to the optical beam based methods the resolution is much better so a single failing contact of e.g. 70 nm technology can clearly be identified which cannot be done by TIVA or OBIRCH.

Optical beam lithography beyond the diffraction limit

SPIE Newsroom ◽  
2013 ◽  
Author(s):  
Min Gu ◽  
Zongsong Gan ◽  
Yaoyu Cao ◽  
Richard A. Evans
Keyword(s):  
Diffraction Limit ◽  
Optical Beam

Confocal Raman mapping

1992 ◽  
Vol 50 (2) ◽  
pp. 1514-1515
Author(s):  
J. Barbillat ◽  
M. Delhaye ◽  
P. Dhamelincourt
Keyword(s):  
Chemical Species ◽  
Diffraction Limit ◽  
Microscopic Level ◽  
Raman Mapping ◽  
Complete Spectrum ◽  
Laser Illumination ◽  
Ccd Detector ◽  
Raman Microprobe ◽  
Photodiode Array ◽  
Raman Image

Raman mapping, with a spatial resolution close to the diffraction limit, can help to reveal the distribution of chemical species at the surface of an heterogeneous sample.As early as 1975,three methods of sample laser illumination and detector configuration have been proposed to perform Raman mapping at the microscopic level (Fig. 1),:- Point illumination:The basic design of the instrument is a classical Raman microprobe equipped with a PM tube or either a linear photodiode array or a two-dimensional CCD detector. A laser beam is focused on a very small area ,close to the diffraction limit.In order to explore the whole surface of the sample,the specimen is moved sequentially beneath the microscope by means of a motorized XY stage. For each point analyzed, a complete spectrum is obtained from which spectral information of interest is extracted for Raman image reconstruction.- Line illuminationA narrow laser line is focused onto the sample either by a cylindrical lens or by a scanning device and is optically conjugated with the entrance slit of the stigmatic spectrograph.

Differentiating Processes in Object Completion Using a Dot Localization Method

2014 ◽  
Author(s):  
Susan Carrigan ◽  
Evan Palmer ◽  
Philip J. Kellman
Keyword(s):  
Localization Method

Electromagnetically Driven 2-axis Optical Beam Steering MEMS Mirror and Its Dependence of Actuation on Magnetic Field

2010 ◽  
Vol 130 (4) ◽  
pp. 107-112 ◽  
Author(s):  
Yoshiyuki Watanabe ◽  
Yutaka Abe ◽  
Shinnosuke Iwamatsu ◽  
Seiya Kobayashi ◽  
Yoshiyuki Takahashi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Beam Steering ◽  
Optical Beam

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

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