Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells

2018 ◽  
Vol 417 ◽  
pp. 76-78 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Doyeol Ahn
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Polarized Light ◽  
Emission Characteristics ◽  
Substrate Dependence

Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures

2012 ◽  
Vol 1432 ◽  
Author(s):  
Chiao-Yun Chang ◽  
Huei-Min Huang ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
Shing-Chung Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Quantum Confinement Effect ◽  
Polarized Light ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Experimental Result ◽  
Multiple Quantum ◽  
Polarization Ratio ◽  
Quantum Well Width

ABSTRACTWe studied the polarization-dependent photoluminescence (PL) of a-plane GaN /AlGaN multiple quantum wells (MQWs) grown on r-plane sapphire substrate with the various well width from 1.5 to 7.33 nm. To clarify the reasons of light emission polarization properties, we applied the 6×6 k‧p model to simulate the E-k dispersion relation and the wave functions to obtain the polarization optical transitions. According to the experimental result, the PL emission peak position exhibits a red-shifted with increasing well width, due to the reduction of the quantum confinement effect. The polarization ratio of a-plane GaN/AlGaN MQWs increased from 0.236 to 0.274 with increasing the quantum well width. This phenomenon is believed to be that y-polarized light emission gradually dominates the PL spectrum and thus enhances the polarization ratio.

Polarized light emission from semipolar GaInN quantum wells on {11¯01} GaN facets

2007 ◽  
Vol 101 (5) ◽  
pp. 053530 ◽  
Author(s):  
M. Feneberg ◽  
F. Lipski ◽  
R. Sauer ◽  
K. Thonke ◽  
P. Brückner ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Polarized Light

Characteristics of Polarized Light Emission in $a$-Plane GaN-Based Multiple Quantum Wells

2012 ◽  
Vol 48 (7) ◽  
pp. 867-871 ◽  
Author(s):  
Chiao-Yun Chang ◽  
Huei-Min Huang ◽  
Chih Ming Lai ◽  
Tien-Chang Lu
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Polarized Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells

1995 ◽  
Vol 395 ◽  
Author(s):  
D.A.S. Loeber ◽  
J.M. Redwing ◽  
N.G. Anderson ◽  
M.A. Tischler
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Stimulated Emission ◽  
Pump Light ◽  
Band Edge Emission ◽  
Emission Characteristics ◽  
Nitrogen Laser ◽  
Edge Emission ◽  
Edge Luminescence ◽  
Double Heterostructures

ABSTRACTEdge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP2

1999 ◽  
Vol 588 ◽  
Author(s):  
Y. Ohno ◽  
S. Takeda
Keyword(s):  
Optical Property ◽  
Light Emission ◽  
Polarized Light ◽  
Structural Data ◽  
Luminescence Spectra ◽  
Antiphase Boundaries ◽  
Transmission Electron ◽  
Tem Method ◽  
Low Dimensional ◽  
First Time

AbstractWe have developed an apparatus for polarized cathodoluminescence (CL) spectroscopy combined with transmission electron microscopy (TEM), that enables us to obtain simultaneously structural data in higher spatial resolution by TEM and polarized luminescence spectra by CL of the same microscopic area. The polarized-CL/TEM method is very useful to study the optical properties of low-dimensional microstructures in semiconducting materials. We have applied the method to examine the optical property of antiphase boundaries in CuPt-ordered GaInP2 and found, for the first time, the polarized light emission from the APBs whose habit planes are parallel to the (T11) and (1T0) atomic planes.

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Estimation of effective mass and subbands in multi-quantum wells using polarized light irradiation

2013 ◽  
Vol 10 (5) ◽  
pp. 727-731 ◽  
Author(s):  
K. Tanaka ◽  
N. Happo ◽  
M. Fujiwara ◽  
N. Kotera
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Polarized Light ◽  
Light Irradiation
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