C-band three-port tunable band-pass thin film optical filter with low polarization-sensitivity

2008 ◽  
Vol 281 (14) ◽  
pp. 3709-3714 ◽  
Author(s):  
Kan Yu ◽  
Wen Liu ◽  
Dexiu Huang ◽  
Jing Chang
Keyword(s):  
Thin Film ◽  
Optical Filter ◽  
Polarization Sensitivity ◽  
Band Pass

scholarly journals Bandwidth-variable tunable optical filter unit for illumination and spectral imaging systems using thin-film optical band-pass filters

2013 ◽  
Vol 84 (4) ◽  
pp. 043113 ◽  
Author(s):  
Georg Hennig ◽  
Gary M. Brittenham ◽  
Ronald Sroka ◽  
Gesa Kniebühler ◽  
Michael Vogeser ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Filter ◽  
Spectral Imaging ◽  
Imaging Systems ◽  
Tunable Optical Filter ◽  
Band Pass ◽  
Filter Unit

A Switchable Optical Filter between Band-stop and Band-pass Responses

2020 ◽  
Author(s):  
Weijun Jiang ◽  
Lu Xu ◽  
Xiaolong Liu ◽  
Yu Yu ◽  
Yuan Yu ◽  
...  
Keyword(s):  
Optical Filter ◽  
Band Pass

scholarly journals Bandwidth Tunable Optical Bandpass Filter Based on Parity-Time Symmetry

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 89
Author(s):  
Bowen Zhang ◽  
Nuo Chen ◽  
Xinda Lu ◽  
Yuhang Hu ◽  
Zihao Yang ◽  
...  
Keyword(s):  
Wavelength Division Multiplexing ◽  
Tuning Range ◽  
Extinction Ratio ◽  
Optical Filter ◽  
Optimized Design ◽  
Coupling Coefficients ◽  
Large Bandwidth ◽  
Time Symmetry ◽  
Bandwidth Tuning ◽  
Band Pass

A chip-scale tunable optical filter is indispensable to meeting the demand for reconfigurability in wavelength division multiplexing systems, channel routing, and switching, etc. Here, we propose a new scheme of bandwidth tunable band-pass filters based on a parity-time (PT) symmetric coupled microresonator system. Large bandwidth tunability is realized on the basis of the tuning of the relative resonant frequency between coupled rings and by making use of the concept of the exception point (EP) in the PT symmetric systems. Theoretical investigations show that the bandwidth tuning range depends on the intrinsic loss of the microresonators, as well as on the loss contrast between the two cavities. Our proof-of-concept device confirms the tunability and shows a bandwidth tuning range from 21 GHz to 49 GHz, with an extinction ratio larger than 15 dB. The discrepancy between theory and experiment is due to the non-optimized design of the coupling coefficients, as well as to fabrication errors. Our design based on PT symmetry shows a distinct route towards the realization of tunable band-pass filters, providing new ways to explore non-Hermitian light manipulation in conventional integrated devices.

Optical Characteristics of Silicon Thin Film in Short-Wave Infrared Band and 1.30 μm Bandpass Optical Filter

2012 ◽  
Vol 32 (10) ◽  
pp. 1031001
Author(s):  
段微波 Duan Weibo ◽  
庄秋慧 Zhuang Qiuhui ◽  
李大琪 Li Daqi ◽  
陈刚 Chen Gang ◽  
余德明 Yu Deming ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Filter ◽  
Short Wave ◽  
Optical Characteristics ◽  
Silicon Thin Film ◽  
Infrared Band ◽  
Short Wave Infrared

A Novel Optical Filter for Removing Bright-Background Using an Enhanced Bacteriorhodopsin Thin Film

2003 ◽  
Vol 20 (12) ◽  
pp. 2161-2164 ◽  
Author(s):  
Zhang Chun-Ping ◽  
Gu Li-Qun ◽  
Chen Gui-Ying ◽  
Guo Zong-Xia ◽  
Fu Guang-Hua ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Filter

Design of Tunable Band-pass Filters and Phase Shifters Using BST Thin Film

2002 ◽  
Author(s):  
Ki-Byoung Kim ◽  
Tae-Soon Yun ◽  
Il-Doo Kim ◽  
Mi-Hwa Lim ◽  
Ho-Gi Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Shifters ◽  
Bst Thin Film ◽  
Band Pass

scholarly journals Some Useful Design Parameters of Non-Uniform Integrated Band-Pass Filters

1983 ◽  
Vol 11 (1) ◽  
pp. 65-70
Author(s):  
H. R. Singh
Keyword(s):  
Thin Film ◽  
Performance Characteristics ◽  
Design Parameters ◽  
Distributed Parameter ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Band Pass ◽  
Relationship Of ◽  
Important Design ◽  
Terminal Band

Important design parameters for a two-port three-terminal band-pass filter configuration of the integrated thin-film exponential distributed parameter R–C–KR microstructure are presented. The circuit exhibits load independent characteristics. The changes in the value of design parameters under varying loading conditions are given. Various plots illustrating the inter-relationship of the different parameters with each other that can serve as guidelines for a system designer to obtain a pre-assigned pattern of the performance characteristics of the microstructure are included.

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