scholarly journals Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

2019 ◽  
Vol 8 ◽  
pp. 10-17 ◽  
Author(s):  
E. Chikoidze ◽  
D.J. Rogers ◽  
F.H. Teherani ◽  
C. Rubio ◽  
G. Sauthier ◽  
...  
Keyword(s):  
Thin Films ◽  
Metallic Conductivity

Epitaxial Thin Films of ATiO3–xHx (A = Ba, Sr, Ca) with Metallic Conductivity

2012 ◽  
Vol 134 (21) ◽  
pp. 8782-8785 ◽  
Author(s):  
Takeshi Yajima ◽  
Atsushi Kitada ◽  
Yoji Kobayashi ◽  
Tatsunori Sakaguchi ◽  
Guillaume Bouilly ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
Metallic Conductivity

Metallic conductivity and weak antilocalization in Bi2 Te2.7 Se0.3 thin films

2015 ◽  
Vol 12 (6) ◽  
pp. 822-825
Author(s):  
Nadir A. Abdullayev ◽  
Afet M. Kerimova ◽  
Khayala V. Aliquliyeva ◽  
Yong Gu Shim ◽  
Kojiro Mimura ◽  
...  
Keyword(s):  
Thin Films ◽  
Weak Antilocalization ◽  
Metallic Conductivity

scholarly journals Emergence of Metallic Conductivity in Ordered One-Dimensional Coordination Polymer Thin Films upon Reductive Doping

2021 ◽  
Vol 13 (8) ◽  
pp. 10249-10256
Author(s):  
Mikko Nisula ◽  
Antti J. Karttunen ◽  
Eduardo Solano ◽  
Girish C. Tewari ◽  
Maarit Karppinen ◽  
...  
Keyword(s):  
Thin Films ◽  
Coordination Polymer ◽  
Polymer Thin Films ◽  
Metallic Conductivity ◽  
One Dimensional

Metallic conductivity in infinite-layer strontium iron oxide thin films reduced by calcium hydride

2014 ◽  
Vol 47 (13) ◽  
pp. 135304 ◽  
Author(s):  
T Katayama ◽  
A Chikamatsu ◽  
Y Hirose ◽  
H Kumigashira ◽  
T Fukumura ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Oxide ◽  
Calcium Hydride ◽  
Oxide Thin Films ◽  
Metallic Conductivity ◽  
Infinite Layer

scholarly journals Photoconductivity of CaH2-reduced BaSnO3 thin films

RSC Advances ◽  
2017 ◽  
Vol 7 (32) ◽  
pp. 19492-19496 ◽  
Author(s):  
C. W. Zhao ◽  
B. C. Luo ◽  
C. L. Chen
Keyword(s):  
Thin Films ◽  
Response Behavior ◽  
Metallic Conductivity ◽  
Photo Response

The underlying origin of the photo-response behavior of CaH2 reduced BaSnO3 thin films with metallic conductivity is analyzed.

Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

2016 ◽  
Vol 46 (4) ◽  
pp. 2030-2039 ◽  
Author(s):  
P. V. Chinta ◽  
O. Lozano ◽  
P. V. Wadekar ◽  
W. C. Hsieh ◽  
H. W. Seo ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Al Doping ◽  
Metallic Conductivity

scholarly journals Highly conductive and stable Co9S8 thin films by atomic layer deposition: from process development and film characterization to selective and epitaxial growth

2021 ◽  
Author(s):  
Miika Mattinen ◽  
Timo Hatanpää ◽  
Kenichiro Mizohata ◽  
Jyrki Räisänen ◽  
Markku Leskela ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Process Development ◽  
Atomic Layer ◽  
Deposition Process ◽  
Metallic Conductivity ◽  
Atomic Layer Deposition Process ◽  
Energy Applications ◽  
Layer Deposition

Co9S8 is an interesting sulfide material with metallic conductivity that has shown promise for various energy applications. Herein, we report a new atomic layer deposition process producing crystalline, pure, and...

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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