Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma

Masaki Mori; Takuya Seino; Daisuke Muto; Masao Sakuraba; Junichi Murota

doi:10.1016/j.mssp.2004.09.034

Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2004.09.034 ◽

2005 ◽

Vol 8 (1-3) ◽

pp. 65-68 ◽

Cited By ~ 2

Author(s):

Masaki Mori ◽

Takuya Seino ◽

Daisuke Muto ◽

Masao Sakuraba ◽

Junichi Murota

Keyword(s):

Epitaxial Growth ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Atomic Order ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low temperature epitaxial growth of Ge using electron‐cyclotron‐resonance plasma‐assisted chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.351189 ◽

1992 ◽

Vol 71 (4) ◽

pp. 1949-1954 ◽

Cited By ~ 3

Author(s):

W. J. Varhue ◽

J. M. Carulli ◽

G. G. Peterson ◽

J. A. Miller

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD

Thin Solid Films ◽

10.1016/j.tsf.2009.10.073 ◽

2010 ◽

Vol 518 (6) ◽

pp. S140-S142 ◽

Cited By ~ 4

Author(s):

Takayuki Nosaka ◽

Masao Sakuraba ◽

Bernd Tillack ◽

Junichi Murota

Keyword(s):

Epitaxial Growth ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Atomic Layer ◽

Electron Cyclotron ◽

Plasma Cvd ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Extensive Control of Plasma Parameters in the Afterglow Region of Electron-Cyclotron-Resonance Plasma for the Epitaxial Growth of Cubic Gallium Nitride

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4329 ◽

1999 ◽

Vol 38 (Part 1, No. 7B) ◽

pp. 4329-4332 ◽

Cited By ~ 1

Author(s):

Kanji Yasui ◽

Masaaki Kikuchi ◽

Atushi Uwabachi ◽

Tadashi Akahane

Keyword(s):

Gallium Nitride ◽

Epitaxial Growth ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Parameters ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma

Applied Physics Letters ◽

10.1063/1.124165 ◽

1999 ◽

Vol 74 (23) ◽

pp. 3573-3575 ◽

Cited By ~ 24

Author(s):

Takashi Matsuura ◽

Yasuhiko Honda ◽

Junichi Murota

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Layer By Layer ◽

Atomic Order ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Substrate Effects on the Epitaxial Growth of AlN Thin Films Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Desposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l1518 ◽

1996 ◽

Vol 35 (Part 2, No. 11B) ◽

pp. L1518-L1520 ◽

Cited By ~ 7

Author(s):

Ju-Won Soh ◽

Jin-Hyeok Kim ◽

Won-Jong Lee

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Substrate Effects ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low-temperature epitaxial growth of AlN films on sapphire by electron cyclotron resonance plasma-assisted chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90867-v ◽

1993 ◽

Vol 130 (1-2) ◽

pp. 308-312 ◽

Cited By ~ 23

Author(s):

Wei Zhang ◽

Yoshihiro Someno ◽

Makoto Sasaki ◽

Toshio Hirai

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.2834 ◽

2000 ◽

Vol 39 (Part 1, No. 5A) ◽

pp. 2834-2838 ◽

Cited By ~ 4

Author(s):

Junsi Gao ◽

Hiroshi Nakashima ◽

Junli Wang ◽

Kanako Iwanaga ◽

Hideharu Nakashima ◽

...

Keyword(s):

Epitaxial Growth ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Discharge Condition ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Dc Bias ◽

Resonance Plasma

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Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

Applied Physics Letters ◽

10.1063/1.102487 ◽

1990 ◽

Vol 56 (15) ◽

pp. 1424-1426 ◽

Cited By ~ 52

Author(s):

S. J. Pearton ◽

U. K. Chakrabarti ◽

A. P. Kinsella ◽

D. Johnson ◽

C. Constantine

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effect of nitrogen flow on the properties of carbon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Vacuum ◽

10.1016/j.vacuum.2021.110223 ◽

2021 ◽

pp. 110223

Author(s):

Sixu Lin ◽

Dong Xie ◽

Yongliang Tang ◽

Yiwen Wang ◽

Fengjuan Jing ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Nitrogen Flow ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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X-ray photoelectron diffraction observation of β-SiC(001) obtained by electron cyclotron resonance plasma assisted growth on Si(001)

Applied Surface Science ◽

10.1016/0169-4332(93)90239-8 ◽

1993 ◽

Vol 68 (4) ◽

pp. 575-582 ◽

Cited By ~ 20

Author(s):

M. Diani ◽

J.L. Bischoff ◽

L. Kubler ◽

D. Bolmont

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

X Ray ◽

Photoelectron Diffraction ◽

Resonance Plasma

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