Effect of substrate temperature and source grain size on the structural and electrical properties of CSVT grown Cu(In1−xGax)Se2 thin films

2007 ◽  
Vol 27 (5-8) ◽  
pp. 1002-1006 ◽  
Author(s):  
M. Nouiri ◽  
Z. Ben Ayadi ◽  
K. Khirouni ◽  
S. Alaya ◽  
K. Djessas ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Structural And Electrical Properties

scholarly journals Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Laser Irradiation ◽  
Nonlinear Coefficient ◽  
Acceptor State ◽  
Xrd Pattern ◽  
Electrical Studies ◽  
Structural And Electrical Properties

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

Structural and Ferroelectric Properties of SrBi2Ta2O9 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Kazushi Amanuma ◽  
Takashi Hase ◽  
Yoicht Mtyasaka
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Structural Change ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Sims Analysis ◽  
Film Preparation

ABSTRACTStructural and electrical properties were investigated for chemically prepared SrBi2Ta2O9(SBT) thin films on Pt/Ti/SiO2/Si substrates. Good ferroelectric properties were obtained with a Pt top electrode: Pr=10.0μC/cm2 and Ec-34kV/cm. Au top electrodes resulted in smaller Pr. However, no fatigue was observed up to 109 switching cycles regardless of the top electrode material. Grains were spherical, not columnar, and the average grain size was 200nm. A marked structural change took place in the bottom Pt/Ti electrode during film preparation. The SIMS analysis indicates the reaction between Bi and Pt

Effect of substrate temperature on the structural and electrical properties of La and Mn co-doped BiFeO3 thin films

2016 ◽  
Vol 619 ◽  
pp. 308-316 ◽  
Author(s):  
Jayant Kolte ◽  
A.S. Daryapurkar ◽  
Mohit Agarwal ◽  
D.D. Gulwade ◽  
P. Gopalan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Bifeo3 Thin Films ◽  
Structural And Electrical Properties ◽  
Co Doped

scholarly journals Effect of Substrate Temperature and Target-Substrate Distance on Growth of TiO2 Thin Films by Using DC- Reactive Sputtering Technique

2014 ◽  
Vol 17 (49) ◽  
Author(s):  
Laith Rabih ◽  
Sudjatmoko ◽  
Kuwat Triyana ◽  
Pekik Nurwantoro
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Tio2 Film ◽  
Anatase Phase ◽  
Optical And Electrical Properties ◽  
Tio2 Thin Films ◽  
Weight Percentage ◽  
Substrate Distance

Titanium oxide (TiO2) thin films have been deposited by a DC sputtering technique onto microscope glass slides. The effect of substrate temperature (Ts) and target-substrate distance (Dts) on some optical and electrical properties have been studied each individually. The structure of TiO2 thin films has been improved and became more crystalline when Ts has been increased (from 150 ºC to 250 ºC). The conductivity (ϭ), deposition rate (DR) and average values of grain size (G.S) have been increased with increasing Ts while the values of band gap (Eg) and weight percentage of the anatase phase (WA) have been decreased. The thickness of TiO2 film has been increased from 920 nm to 960 nm with increase Ts while it has been decreased from 960 nm to 680 nm with increase Dts (from 25mm to 35mm). As Dts has been increased, the conductivity ϭ, thickness (d) and average values of grain size have been decreased. The decreasing of conductivity at Dts=35 maybe attributes to increase the weight percentage of the rutile phase (WR). The XRD results show that the TiO2 structure phase has been varied. The results show that the optical and electrical properties of TiO2 film affected by changes the condition parameters especially Ts and Dts as well as the density and energy of the impinging atoms. The surface morphology and component of TiO2 thin films, resistance, optical transmittance and structure of film were characterized by SEM (EDX), I-V meter, UV-VIS spectrophotometer and XRD respectively.

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