scholarly journals Structural studies of thin films of semiconducting nanoparticles in polymer matrices

2007 ◽  
Vol 27 (5-8) ◽  
pp. 1372-1376 ◽  
Author(s):  
Tiziana Di Luccio ◽  
Emanuela Piscopiello ◽  
Anna Maria Laera ◽  
Marco Vittori Antisari
1989 ◽  
Vol 40 (12) ◽  
pp. 8256-8269 ◽  
Author(s):  
M. B. Stearns ◽  
C. H. Lee ◽  
T. L. Groy

2008 ◽  
Author(s):  
Ajit Mahadkar ◽  
Alka Chauhan ◽  
Madhavi Thakurdesai ◽  
Deepak Gaikwad ◽  
P. Predeep ◽  
...  

2016 ◽  
Author(s):  
Sarita Sharma ◽  
Mast Ram ◽  
Shilpa Thakur ◽  
Hakikat Sharma ◽  
N. S. Negi

2011 ◽  
Author(s):  
M. Manonmani Parvathi ◽  
V. Arivazhagan ◽  
A. Mohan ◽  
S. Rajesh ◽  
P. Predeep ◽  
...  

1997 ◽  
Vol 12 (10) ◽  
pp. 2533-2542 ◽  
Author(s):  
L. C. Nistor ◽  
J. Van Landuyt ◽  
V. G. Ralchenko ◽  
A. A. Smolin ◽  
K. G. Korotushenko ◽  
...  

Diamond thin films grown from a dc-arc discharge in CH4/H2 mixtures on Si wafers were examined by transmission electron microscopy and Raman spectroscopy. This deposition method provides good diamond crystallinity at high CH4 concentrations (3%–9%). Seeding the substrate with 5 nm diamond particles at a density of 2 × 1012 cm−1 followed by argon laser irradiation to reduce their agglomeration gives, just after starting deposition, a density of growth centers of 1010cm−2. At 3% CH4 concentration the film grows with almost perfect crystallites. Richer CH4 mixtures (5% and 9%) produce crystallites with twins and stacking faults. An amorphous 20–70 nm SiC interlayer is present at these CH4 concentrations, which was not observed at 3% CH4. Amorphous sp3- and sp2-bonded carbon was detected by Raman spectroscopy at all CH4 concentrations and correlated with TEM data.


1998 ◽  
Author(s):  
Q. Zhang ◽  
R.W. Whatmore ◽  
M.E. Vickers ◽  
Z. Huang

1999 ◽  
Vol 198-199 ◽  
pp. 279-281 ◽  
Author(s):  
Hiroki Yamazaki ◽  
Yoshikazu Tanaka ◽  
Koichi Katsumata

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