Resistance change in on-chip aluminum interconnects under cyclic thermo-mechanical stress

2019 ◽  
Vol 100-101 ◽  
pp. 113321
Author(s):  
Matthias Ritter ◽  
Martin Pfost
Keyword(s):  
Mechanical Stress ◽  
Resistance Change ◽  
On Chip ◽  
Aluminum Interconnects

Non-Destructive Electrical Techniques as Means for Understanding the Basic Mechanisms of Electromigration

1994 ◽  
Vol 337 ◽  
Author(s):  
A. Scorzoni ◽  
I. De Munari ◽  
H. Stulens
Keyword(s):  
Experimental Data ◽  
High Resolution ◽  
Mechanical Stress ◽  
Diffusion Model ◽  
Physical Mechanism ◽  
Relative Resistance ◽  
Resistance Change ◽  
Non Destructive ◽  
Theoretical Results ◽  
Good Agreement

ABSTRACTIn this paper results of recently developed high resolution resistometric electromigration techniques will be described, with particular attention to the behaviour of narrow, near-bamboo metal lines. After a discussion on recent theoretical results published in the literature, a diffusion model correlating mechanical stress and electromigration will be adopted to describe experimental results of relative resistance change both during and after electromigration. The good agreement between experimental data and simulations must not hide that something must still be understood about the physical mechanism leading to resistance changes during electromigration experiments.

Reliability Study of On-Chip Interconnects : Prediction of Electromigration Resistance on A Short Time Scale

1994 ◽  
Vol 337 ◽  
Author(s):  
W. De Ceuninck ◽  
V. D’Haeger ◽  
H. Stulens ◽  
L. De Schepper ◽  
L.M. Stals
Keyword(s):  
Time Scale ◽  
Careful Analysis ◽  
Short Time Scale ◽  
Time To Failure ◽  
Electrical Measurements ◽  
Resistance Change ◽  
On Chip ◽  
Short Time ◽  
Mean Time

ABSTRACTA new method is presented to evaluate the resistance to electromigration (EM) of on-chip interconnects. The method is based on high resolution in-situ electrical measurements. In this way, the electrical resistance is measured with high accuracy during electromigration at high temperature. After careful analysis of the isothermal results, it was found that the metallization can be characterized by one parameter: the rate of resistance change (RRC). It is shown that the RRC is very sensistive to the electromigration performance. The performance level of the different metallizations can easily be detected and can be qualified in a quantitative way. The results are also compared with classic Mean Time To Failure (MTTF) results and it is found that there exists an almost linear relationship between the RRC results and the MTTF results. However, the in-situ technique offers the benifit that a metallization can be characterized on a time scale as short as a few days, which is certainly not the case for the classical techniques.

Compensation of Mechanical Stress-Induced Drift of Bandgap References With On-Chip Stress Sensor

2015 ◽  
Vol 15 (9) ◽  
pp. 5115-5121 ◽  
Author(s):  
Mario Motz ◽  
Udo Ausserlechner ◽  
Michael Holliber
Keyword(s):  
Mechanical Stress ◽  
Stress Sensor ◽  
On Chip

Real-Time Detection of Estrogen by Microcantilever Sensor in Microfluidic Channel

2008 ◽  
Author(s):  
Nazmul Islam
Keyword(s):  
Real Time ◽  
Estrogenic Activity ◽  
Microfluidic Channel ◽  
Environmental Water ◽  
Primary Objective ◽  
Dilute Solution ◽  
Resistance Change ◽  
Lab On Chip ◽  
Passive Adsorption ◽  
On Chip

As the world becomes increasingly concerned with endocrine disruptor from estrogenic activity, and since the threat of estrogen can be substantially mitigated if detected early, the demand for real-time/on-site detection of estrogen is expanding quickly. However, current technology is expensive, technically complicated and not available for estrogen level determination at the contamination sites. The primary objective of this research is to develop and validate a robust, rapid lab-on-chip for detecting estrogen in environmental water samples. Anti-estrogen antibodies can be layered to the microcantilever (MC) surface through passive adsorption using a dilute solution of antibody. The estrogen in the water will bind/react with antibody, which will result in a strain in the cantilever. The strain of the cantilever can ultimately be measured as a resistance change in the microsystem. MC will be integrated with AC electokinetic to produce a lab-on-a-chip that can concentrate measure and differentiate viable estrogen.

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