Modeling and analysis of crosstalk induced overshoot/undershoot effects in multilayer graphene nanoribbon interconnects and its impact on gate oxide reliability

2016 ◽  
Vol 63 ◽  
pp. 231-238 ◽  
Author(s):  
M. Sahoo ◽  
H. Rahaman
Keyword(s):  
Gate Oxide ◽  
Graphene Nanoribbon ◽  
Multilayer Graphene ◽  
Modeling And Analysis ◽  
Oxide Reliability

Edge scattering limited crosstalk analysis in adjacent multilayer graphene interconnects and its impact on gate oxide reliability

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ramneek Sidhu ◽  
Mayank Kumar Rai
Keyword(s):  
Failure Rate ◽  
Gate Oxide ◽  
Oxide Semiconductor ◽  
Circuit Modeling ◽  
Multilayer Graphene ◽  
Clock Frequency ◽  
Content Type ◽  
Oxide Reliability ◽  
Edge Roughness ◽  
Edge Scattering

Purpose This paper aims to present the edge scattering dominant circuit modeling. The effect of crosstalk on gate oxide reliability (GOR), along with the mitigation using shielding technique is further studied. Design/methodology/approach An equivalent distributed Resistance Inductance Capacitance circuit of capacitively coupled interconnects of multilayer graphene nanoribbon (MLGNR) has been considered for T Simulation Program with Integrated Circuit Emphasis (TSPICE) simulations under functional and dynamic switching conditions. Complementary metal oxide semiconductor driver transistors are modeled by high performance predictive technology model that drive the distributed segment with a capacitive load of 0.001 fF, VDD and clock frequency as 0.7 V and 0.2 GHz, respectively, at 14 nm technology node. Findings The results reveal that the crosstalk induced delay and noise area are dominated by the overall mean free path (MFP) (i.e. including the effect of edge roughness induced scattering), in contrary to, acoustic and optical scattering limited MFP with the temperature, width and length variations. Further, GOR, estimated in terms of average failure rate (AFR), shows that the shielding technique is an effective method to minimize the relative GOR failure rate by, 0.93e-7 and 0.7e-7, in comparison to the non-shielded case with variations in interconnect’s length and width, respectively. Originality/value Considering realistic circuit modeling for MLGNR interconnects by incorporating the edge roughness induced scattering mechanism, the outcomes exhibit more penalty in terms of crosstalk induced noise area and delay. The shielding technique is found to be an effective mitigating technique for minimizing AFR in coupled MLGNR interconnects.

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

The impact of F contamination induced by the process on the gate oxide reliability

1998 ◽  
Vol 38 (2) ◽  
pp. 255-258 ◽  
Author(s):  
G Ghidini ◽  
C Clementi ◽  
D Drera ◽  
F Maugain
Keyword(s):  
Gate Oxide ◽  
Oxide Reliability ◽  
The Impact

Impacts of Area-Dependent Defects on the Yield and Gate Oxide Reliability of SiC Power MOSFETs

2021 ◽  
Author(s):  
Tianshi Liu ◽  
Shengnan Zhu ◽  
Michael Jin ◽  
Limeng Shi ◽  
Marvin H. White ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Power Mosfets ◽  
Oxide Reliability
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