Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits

2014 ◽  
Vol 54 (9-10) ◽  
pp. 2278-2283 ◽  
Author(s):  
J.L. Autran ◽  
M. Glorieux ◽  
D. Munteanu ◽  
S. Clerc ◽  
G. Gasiot ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Integrated Circuits ◽  
Transient Current ◽  
Charge Collection ◽  
Single Event ◽  
Single Event Transient ◽  
Monte Carlo Modeling

Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000077-000082 ◽  
Author(s):  
E. Boufouss ◽  
J. Alvarado ◽  
D. Flandre
Keyword(s):  
Heavy Ions ◽  
Transient Current ◽  
Compact Modeling ◽  
Single Event ◽  
Single Event Transient ◽  
Sram Cell ◽  
Physical Simulations ◽  
Simulation Time ◽  
Good Agreement ◽  
High Temperature Effect

A temperature dependence analysis of the single event transient current induced by heavy ions irradiation is performed in the range of 300K to 500K on a 1μm SOI CMOS MOSFET standard 6T-SRAM cell. The Sentaurus TCAD mixed-mode numerical simulation showed a significant impact of the temperature on the current induced by the radiation and as a result, an increase of the 6T-SRAM sensitivity upon radiation. A SOI MOSFET compact model introduced in SPICE as a Verilog-A module reproducing the single event effects was developed. This model shows a very good agreement with the TCAD simulations results but with a drastic reduction of the simulation time. Furthermore this model could be extended to other circuits simulations. This result is of importance to allow for extensive circuit design studies which cannot be carried out with TCAD physical simulations.

Studies of single-event transient current induced in GaAs and Si diodes by energetic heavy ions

2001 ◽  
Vol 60 (4-5) ◽  
pp. 269-272 ◽  
Author(s):  
Toshio Hirao ◽  
Hisayoshi Itoh ◽  
Sohei Okada ◽  
Isamu Nashiyama
Keyword(s):  
Heavy Ions ◽  
Transient Current ◽  
Single Event ◽  
Single Event Transient

Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths

2011 ◽  
Vol 11 (3) ◽  
pp. 401-406 ◽  
Author(s):  
Jonathan R. Ahlbin ◽  
Matthew J. Gadlage ◽  
Nicholas M. Atkinson ◽  
Balaji Narasimham ◽  
Bharat L. Bhuva ◽  
...  
Keyword(s):  
Charge Collection ◽  
Single Event ◽  
Single Event Transient

Effect of ion position on single-event transient current

1997 ◽  
Vol 130 (1-4) ◽  
pp. 486-490 ◽  
Author(s):  
Toshio Hirao ◽  
Isamu Nashiyama ◽  
Tomihiro Kamiya ◽  
Tamotsu Suda ◽  
Takuro Sakai ◽  
...  
Keyword(s):  
Transient Current ◽  
Single Event ◽  
Single Event Transient
Sign in / Sign up

Export Citation Format

Share Document