Monolithic integrable capacitive humidity sensing method for material characterization of dielectric thin films

2014 ◽  
Vol 54 (9-10) ◽  
pp. 1741-1744 ◽  
Author(s):  
A. Rückerl ◽  
S. Huppmann ◽  
R. Zeisel ◽  
S. Katz
Keyword(s):  
Thin Films ◽  
Material Characterization ◽  
Dielectric Thin Films ◽  
Humidity Sensing

On-wafer characterization of thermomechanical properties of dielectric thin films by a bending beam technique

2000 ◽  
Vol 88 (5) ◽  
pp. 3029-3038 ◽  
Author(s):  
Jie-Hua Zhao ◽  
Todd Ryan ◽  
Paul S. Ho ◽  
Andrew J. McKerrow ◽  
Wei-Yan Shih
Keyword(s):  
Thin Films ◽  
Thermomechanical Properties ◽  
Dielectric Thin Films ◽  
Beam Technique

Mechanical characterization of low-k and barrier dielectric thin films

2005 ◽  
Vol 82 (3-4) ◽  
pp. 368-373 ◽  
Author(s):  
N. Chérault ◽  
G. Carlotti ◽  
N. Casanova ◽  
P. Gergaud ◽  
C. Goldberg ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Characterization ◽  
Dielectric Thin Films ◽  
Low K

Growth and Characterization of Chalcopyrite Nanocrystals: Beyond Conventional Thin Films

2007 ◽  
Vol 1012 ◽  
Author(s):  
David Fuertes Marrón ◽  
Sebastian Lehmann ◽  
Justyna Kosk ◽  
Sascha Sadewasser ◽  
Martha Ch. Lux-Steiner
Keyword(s):  
Thin Films ◽  
Material Characterization ◽  
Processing Parameters ◽  
Scanning Probe ◽  
Vapor Liquid Solid ◽  
Embedded Structures ◽  
Solid Substrates ◽  
Growth Method ◽  
Chalcogenide Compound

AbstractA dry method for the growth of highly-structured Cu-containing chalcopyrite material on solid substrates, based on the use of metallic precursors, is described. Nanocrystals, sub-micrometer polycrystalline dots, and macroscopic clusters have be grown, either as isolated units or alternatively as embedded structures in a matrix of a binary chalcogenide compound, by adjusting processing parameters. Vapor-liquid-solid (VLS) induced growth has been used for the growth of chalcopyrite nanowires. Examples of material characterization by scanning probe techniques are shown, demonstrating the suitability of the proposed growth method.

Resonant absorption in dielectric thin films for humidity sensing

2017 ◽  
Vol 14 (1/2/3/4/5/6) ◽  
pp. 204 ◽  
Author(s):  
Madhuri Kumari ◽  
Boyang Ding ◽  
Richard J. Blaikie
Keyword(s):  
Thin Films ◽  
Resonant Absorption ◽  
Dielectric Thin Films ◽  
Humidity Sensing

Micromechanical Characterization of Dielectric Thin Films

1993 ◽  
Vol 308 ◽  
Author(s):  
James M. Grow
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Silicon Carbonitride ◽  
Dielectric Thin Films ◽  
Micromechanical Characterization

ABSTRACTA nanoindenter has been used to obtain Young's modulus and hardness data for a variety of dielectric thin films including silicon carbide, boron nitride, silicon carbonitride, and silicon oxide. These films, were synthesized by low pressure and plasma enhanced chemical vapor deposition, and had a thickness from 0.25 to a few microns. For the BN films, the modulus and hardness of the films decreased significantly as the deposition temperature increased while the reverse was true for the SiC films. In both cases, these changes were related to variations in the compositions of the deposits due to the onset of different reactions as the temperature is increased. Silicon carbonitride films oxidized slowly when synthesized at temperatures below 200º C and the Young's modulus of these films increased at higher deposition temperatures. For silicon dioxide, there was little change in the composition of the films over the deposition temperature range investigated (375–475º C), thus correspondingly, small variations in the micromechanical properties of the material. However, moisture and hydrogen removal caused by an anneal at 800º C resulted in an significant increase in the modulus and hardness of these films.

Recursive Image Charge Approach for Quantitative Characterization of Dielectric Thin Film Library Using Scanning Tip Microwave Near-field Microscopy

2003 ◽  
Vol 804 ◽  
Author(s):  
Chen Gao ◽  
Bo Hu ◽  
Mengming Huang ◽  
Pu Zhang ◽  
Wen-han Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Near Field ◽  
Image Charge ◽  
Film Library ◽  
Quantitative Characterization ◽  
Dielectric Thin Films ◽  
Dielectric Thin Film

ABSTRACTWe developed a recursive image charge approach for quantitative characterizations of dielectric thin films using the scanning tip microwave near-field microscope. With this method, frequency shift of the microscope as functions of the dielectric constant and the thickness of a film can be effectively computed in a recursive way. We believe that this approach can promote the high-throughput characterization of the dielectric libraries.

Free space material characterization of carbon nanotube thin films at sub-terahertz frequencies

2016 ◽  
Vol 30 (5) ◽  
pp. 589-598
Author(s):  
Sujitha Puthukodan ◽  
Ehsan Dadrasnia ◽  
Vinod V. K. Thalakkatukalathil ◽  
Horacio Lamela Rivera ◽  
Guillaume Ducournau ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Free Space ◽  
Material Characterization ◽  
Terahertz Frequencies ◽  
Space Material
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