Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping

2012 ◽  
Vol 52 (12) ◽  
pp. 2884-2888 ◽  
Author(s):  
D.J. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
J. Navales ◽  
F. Ren ◽  
...  
Keyword(s):  
2012 ◽  
Vol 1432 ◽  
Author(s):  
D. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
F. Ren ◽  
P. Whiting ◽  
...  

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.


2014 ◽  
Vol 61 (4) ◽  
pp. 153-158
Author(s):  
T.-S. Kang ◽  
D. Cheney ◽  
B. P. Gila ◽  
F. Ren ◽  
S. J. Pearton
Keyword(s):  

1985 ◽  
Vol 10 (6) ◽  
pp. 883-891 ◽  
Author(s):  
M. Allegrini ◽  
G. Alzetta ◽  
P. Bicchi ◽  
S. Gozzini ◽  
L. Moi

1985 ◽  
Vol 10 (6) ◽  
pp. 659-674 ◽  
Author(s):  
E.W. Otten

1985 ◽  
Vol 10 (6) ◽  
pp. 1117-1138 ◽  
Author(s):  
C. Hermann ◽  
G. Lampel ◽  
V.I. Safarov
Keyword(s):  

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