Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories

2012 ◽  
Vol 52 (3) ◽  
pp. 525-529 ◽  
Author(s):  
Pavel Poliakov ◽  
Pieter Blomme ◽  
Alessandro Vaglio Pret ◽  
Miguel Miranda Corbalan ◽  
Roel Gronheid ◽  
...  
Keyword(s):  
Error Correcting Codes ◽  
Nand Flash ◽  
Line Edge Roughness ◽  
Flash Memories ◽  
Edge Roughness

Induced Variability of Cell-to-Cell Interference by Line Edge Roughness in nand Flash Arrays

2012 ◽  
Vol 33 (2) ◽  
pp. 164-166 ◽  
Author(s):  
Pavel Poliakov ◽  
Pieter Blomme ◽  
Alessandro Vaglio Pret ◽  
Miguel Miranda Corbalan ◽  
Roel Gronheid ◽  
...  
Keyword(s):  
Nand Flash ◽  
Line Edge Roughness ◽  
Edge Roughness

Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

2011 ◽  
Vol 51 (5) ◽  
pp. 919-924 ◽  
Author(s):  
Pavel Poliakov ◽  
Pieter Blomme ◽  
Miguel Miranda Corbalan ◽  
Jan Van Houdt ◽  
Wim Dehaene
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Line Edge Roughness ◽  
Nand Flash Memory ◽  
Edge Roughness

A Heavy-ion Beam Monitor Based on 3D NAND Flash Memories

2021 ◽  
pp. 1-1
Author(s):  
S. Gerardin ◽  
M. Bagatin ◽  
A. Paccagnella ◽  
S. Beltrami ◽  
A. Costantino ◽  
...  
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Nand Flash ◽  
Flash Memories ◽  
Beam Monitor ◽  
Heavy Ion Beam

Characterization of Line-Edge Roughness in Cu/Low-kInterconnect Pattern

2008 ◽  
Vol 47 (4) ◽  
pp. 2501-2505 ◽  
Author(s):  
Atsuko Yamaguchi ◽  
Daisuke Ryuzaki ◽  
Ken-ichi Takeda ◽  
Jiro Yamamoto ◽  
Hiroki Kawada ◽  
...  
Keyword(s):  
Line Edge Roughness ◽  
Edge Roughness

Improving Read Disturb Characteristics by Self-Boosting Read Scheme for Multilevel NAND Flash Memories

2009 ◽  
Vol 48 (4) ◽  
pp. 04C062 ◽  
Author(s):  
Myounggon Kang ◽  
Ki-Tae Park ◽  
Youngsun Song ◽  
Soonwook Hwang ◽  
Byung Yong Choi ◽  
...  
Keyword(s):  
Nand Flash ◽  
Flash Memories
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