A new built-in screening methodology for Successive Approximation Register Analog to Digital Converters

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1750-1757 ◽  
Author(s):  
Vezio Malandruccolo ◽  
Mauro Ciappa ◽  
Hubert Rothleitner ◽  
M. Hommel ◽  
Wolfgang Fichtner
Keyword(s):  
Successive Approximation ◽  
Analog To Digital Converters ◽  
Analog To Digital ◽  
Successive Approximation Register

scholarly journals Comparison of 4-Bit SAR ADC Using Different Logic Styles in 90nm Technology

2021 ◽  
pp. 100-108
Author(s):  
Mrs. Lakshmidevi TR ◽  
Mr. K N Jeevan Reddy ◽  
Mr. Ashrith Rao ◽  
Mr. Dhanush Kashyap S ◽  
Ms. Chandini K
Keyword(s):  
Successive Approximation ◽  
Logic Gates ◽  
Design Tool ◽  
Sar Adc ◽  
Analog To Digital Converters ◽  
Battery Life ◽  
Double Pass ◽  
Analog To Digital ◽  
Successive Approximation Register ◽  
Tool Building

In recent years, we have come across a growing need for the design of low power, long battery life Successive Approximation Register (SAR) Analog-to-Digital Converters (ADC). ADCs are the major component of all the systems which need to process an analogue signal obtained from measuring real world parameters and hence they need to be efficient enough depending on the application and power constraint of the device. Speed is also an important parameter as it is used in many real time applications. The basic components of the SAR ADC can be implemented using circuits of various logics available for the logic gates, adders, comparators utilised in it. This paper presents the working of 4-bit successive approximation register analog-to-digital converters (SAR ADC) in three different logics namely, Complementary Metal Oxide Semiconductors (CMOS), Transmission Gates (TG), and Double Pass Transistors (DPL) logics, which were used in the basic components of each major block of the ADC. The aim of this paper here is to compare the various parameters such as area, power consumption and delay between the three different technologies chosen above. The SAR ADCs were implemented for this purpose in 90nm Technology using the Cadence Virtuoso Design Tool building schematics and layouts for the same and calculating the various parameters required for the above-mentioned comparison.

scholarly journals A 1 GS/s 12-Bit Pipelined/SAR Hybrid ADC in 40 nm CMOS Technology

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 375
Author(s):  
Jianwen Li ◽  
Xuan Guo ◽  
Jian Luan ◽  
Danyu Wu ◽  
Lei Zhou ◽  
...  
Keyword(s):  
Successive Approximation ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Wide Band ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Least Significant Bit ◽  
Analog To Digital ◽  
Successive Approximation Register ◽  
Adaptive Power

A 1 GS/s 12-bit pipelined/successive-approximation-register (pipelined/SAR) hybrid analog-to-digital converter (ADC) is presented in this paper, where the five most significant bits are resolved by two cascading 2.5-bit multiplying digital-to-analog converters, and the eight least significant bits are determined by a two-channel time-interleaved successive-approximation-register (TI-SAR) quantizer. An integrated input buffer and an operational amplifier with improved voltage efficiency at 1.8 V are adopted to achieve high-linearity stably in wide band for 1 GS/s. By designing a 500 MS/s 8-bit SAR quantizer at 1 V, the number of required interleaved channels is minimized to simplify the complexity and an adaptive power/ground is used to compensate the common-mode mismatch between the blocks in different power supply voltages. The offset and gain mismatches due to the TI-SAR quantizer are compensated by a calibration scheme based on virtually-interleaved channels. This ADC is fabricated in a 40 nm complementary metal-oxide-semiconductor (CMOS) technology, and it achieves a signal-to-noise-and-distortion ratio (SNDR) of 58.2 dB and a spurious free dynamic range (SFDR) of 72 dB with a 69 MHz input tone. When the input frequency increases to 1814 MHz in the fourth Nyquist zone, it can maintain an SNDR of 55.3 dB and an SFDR of 64 dB. The differential and integral nonlinearities are −0.94/+0.85 least significant bit (LSB) and −3.4/+3.9 LSB, respectively. The core ADC consumes 94 mW, occupies an active area of 0.47 mm × 0.25 mm. The Walden figure of merit reaches 0.14 pJ/step with a Nyquist input.

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