Optimization of high voltage LDMOSFETs with complex multiple-resistivity drift region and field plate

2010 ◽  
Vol 50 (7) ◽  
pp. 949-953 ◽  
Author(s):  
Yang-Hua Chang ◽  
Shih-Wei Lin ◽  
Chia-Hao Chang
Keyword(s):  
High Voltage ◽  
Drift Region ◽  
Field Plate

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

2014 ◽  
Vol 778-780 ◽  
pp. 841-844 ◽  
Author(s):  
Koji Nakayama ◽  
Shuji Ogata ◽  
Toshihiko Hayashi ◽  
Tetsuro Hemmi ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
High Voltage ◽  
Recovery Time ◽  
Carrier Lifetime ◽  
Low Voltage ◽  
Reduction Rate ◽  
Drift Region ◽  
Pin Diode ◽  
Fully Depleted ◽  
Fast Switching ◽  
Reverse Recovery Time

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

High-voltage planar devices using field plate and semi-resistive layers

1991 ◽  
Vol 38 (7) ◽  
pp. 1681-1684 ◽  
Author(s):  
D. Jaume ◽  
G. Charitat ◽  
J.M. Reynes ◽  
P. Rossel
Keyword(s):  
High Voltage ◽  
Field Plate

High-voltage multiple-resistivity drift-region LDMOS

Energy ◽  
1993 ◽  
Vol 18 (12) ◽  
pp. 1311-1312
Author(s):  
Jose G Mena ◽  
CAT Salama
Keyword(s):  
High Voltage ◽  
Drift Region

A High-Voltage (>600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology

2016 ◽  
Vol 63 (5) ◽  
pp. 1969-1976 ◽  
Author(s):  
Yue Hu ◽  
Hao Wang ◽  
Caixia Du ◽  
Miaomiao Ma ◽  
Mansun Chan ◽  
...  
Keyword(s):  
High Voltage ◽  
Drift Region ◽  
Soi Technology

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

2018 ◽  
Vol 33 (12) ◽  
pp. 125019
Author(s):  
Yen-Lin Tsai ◽  
Jone F Chen ◽  
Shang-Feng Shen ◽  
Hao-Tang Hsu ◽  
Chia-Yu Kao ◽  
...  
Keyword(s):  
High Voltage ◽  
Drift Region ◽  
Mos Transistors ◽  
Hot Carrier

scholarly journals Methods and algorithm for calculating the focal parameters of a hollow conical electron beam in high-voltage glow discharge electron guns with a focusing magnetic lens

2021 ◽  
pp. 17-32
Author(s):  
Igor Melnyk ◽  
Sergey Tugay ◽  
Volodymyr Kyryk ◽  
Iryna Shved
Keyword(s):  
Electron Beam ◽  
Glow Discharge ◽  
High Voltage ◽  
Discrete Mathematics ◽  
Drift Region ◽  
Magnetic Lens ◽  
Focal Distance ◽  
Electron Guns ◽  
Focal Parameters ◽  
Focal Ring

The algorithm is considered for calculating the focal distance of a hollow conical electron beam generated by high-voltage glow discharge electron guns with magnetic focusing of the beam in the drift region, as well as a method for calculating the diameter of the focal ring and its thickness for such a beam. The proposed algorithm is based on the theory of electron drift in the field of a focusing magnetic lens and is designed using the methods of discrete mathematics and the minimax analysis. The obtained simulation results made it possible to establish the influence of the magnetic lens current on the focal diameter of a hollow conical electron beam and on its focal ring thickness. It is shown that the change in the focal parameters of a hollow conical electron beam can be effectively provided through the regulation of the magnetic lens current.

A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region

2019 ◽  
Vol 40 (7) ◽  
pp. 1151-1154 ◽  
Author(s):  
Wentong Zhang ◽  
Lu Li ◽  
Ming Qiao ◽  
Zhenya Zhan ◽  
Shikang Cheng ◽  
...  
Keyword(s):  
High Voltage ◽  
Drift Region
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