A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Jungwoo Joh; Feng Gao; Tomás Palacios; Jesús A. del Alamo

doi:10.1016/j.microrel.2010.02.015

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2010.02.015 ◽

2010 ◽

Vol 50 (6) ◽

pp. 767-773 ◽

Cited By ~ 70

Author(s):

Jungwoo Joh ◽

Feng Gao ◽

Tomás Palacios ◽

Jesús A. del Alamo

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Critical Voltage ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electrical Degradation

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2008.917815 ◽

2008 ◽

Vol 29 (4) ◽

pp. 287-289 ◽

Cited By ~ 173

Author(s):

Jungwoo Joh ◽

J.A. del Alamo

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Critical Voltage ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electrical Degradation

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Mechanism of Proton-Induced Electrical Degradation of AlGaN/GaN High Electron Mobility Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.107957 ◽

2021 ◽

pp. 107957

Author(s):

Dong-Seok Kim ◽

Jeong-Gil Kim ◽

Jun-Hyeok Lee ◽

Yong Seok Hwang ◽

Young Jun Yoon ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electrical Degradation

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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters

Journal of Electronic Materials ◽

10.1007/s11664-010-1434-7 ◽

2010 ◽

Vol 40 (4) ◽

pp. 362-368

Author(s):

Valerio Di Lecce ◽

Michele Esposto ◽

Matteo Bonaiuti ◽

Fausto Fantini ◽

Gaudenzio Meneghesso ◽

...

Keyword(s):

Numerical Simulations ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Scattering Parameters ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

Electrical Degradation

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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Gate Structure

ECS Meeting Abstracts ◽

10.1149/ma2011-02/31/2082 ◽

2011 ◽

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Critical Voltage ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gate Structure ◽

State Stress

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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization

ECS Transactions ◽

10.1149/1.3629954 ◽

2019 ◽

Vol 41 (6) ◽

pp. 63-70 ◽

Cited By ~ 1

Author(s):

Chien-Fong Lo ◽

Lu Liu ◽

Tsung-Sheng Kang ◽

Ryan Davies ◽

Brent P. Gila ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Critical Voltage ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

State Stress

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Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

Journal of Semiconductors ◽

10.1088/1674-4926/33/5/054005 ◽

2012 ◽

Vol 33 (5) ◽

pp. 054005

Author(s):

Yulong Fang ◽

Shaobo Dun ◽

Bo Liu ◽

Jiayun Yin ◽

Shujun Cai ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electrical Degradation

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Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2011.2170433 ◽

2011 ◽

Vol 58 (6) ◽

pp. 2918-2924 ◽

Cited By ~ 41

Author(s):

Y. S. Puzyrev ◽

T. Roy ◽

E. X. Zhang ◽

D. M. Fleetwood ◽

R. D. Schrimpf ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electrical Degradation ◽

Defect Evolution ◽

Radiation Induced

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Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796725 ◽

2008 ◽

Cited By ~ 20

Author(s):

Jungwoo Joh ◽

Jesus A. del Alamo

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electrical Degradation

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Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

2006 International Electron Devices Meeting ◽

10.1109/iedm.2006.346799 ◽

2006 ◽

Cited By ~ 105

Author(s):

Jungwoo Joh ◽

Jesus A. del Alamo

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electrical Degradation

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Electrical degradation of InAlAs/InGaAs metamorphic high-electron mobility transistors

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979464 ◽

2002 ◽

Cited By ~ 1

Author(s):

S.D. Mertens ◽

J.A. del Alamo

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electrical Degradation

Download Full-text