Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

2009 ◽  
Vol 49 (9-11) ◽  
pp. 1188-1191 ◽  
Author(s):  
M. Lanza ◽  
M. Porti ◽  
M. Nafría ◽  
X. Aymerich ◽  
G. Ghidini ◽  
...  
Keyword(s):  
Leakage Current ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Stress Induced Leakage Current ◽  
Trapped Charge

Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes

2004 ◽  
Vol 44 (8) ◽  
pp. 1269-1273 ◽  
Author(s):  
Guoqiao Tao ◽  
Andrea Scarpa ◽  
Leo van Marwijk ◽  
Kitty van Dijk ◽  
Fred Kuper
Keyword(s):  
Leakage Current ◽  
Memory Processes ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Stress Induced Leakage Current

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Fluorenone/carbazole based bipolar small molecules for non-volatile memory devices

2020 ◽  
Vol 78 ◽  
pp. 105584 ◽  
Author(s):  
Jia-Qin Yang ◽  
Li-Yu Ting ◽  
Ruopeng Wang ◽  
Jing-Yu Mao ◽  
Yi Ren ◽  
...  
Keyword(s):  
Small Molecules ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals Comparing domain wall synapse with other non volatile memory devices for on-chip learning in analog hardware neural network

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025111 ◽  
Author(s):  
Divya Kaushik ◽  
Utkarsh Singh ◽  
Upasana Sahu ◽  
Indu Sreedevi ◽  
Debanjan Bhowmik
Keyword(s):  
Neural Network ◽  
Domain Wall ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
On Chip ◽  
Hardware Neural Network

Graphene Based Non-Volatile Memory Devices

2014 ◽  
Vol 26 (31) ◽  
pp. 5496-5503 ◽  
Author(s):  
Xiaomu Wang ◽  
Weiguang Xie ◽  
Jian-Bin Xu
Keyword(s):  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Multiferroic Bi0.7Dy0.3FeO3 films as high k dielectric material for advanced non-volatile memory devices

2009 ◽  
Vol 45 (16) ◽  
pp. 821 ◽  
Author(s):  
K. Prashanthi ◽  
S.P. Duttagupta ◽  
R. Pinto ◽  
V.R. Palkar
Keyword(s):  
Dielectric Material ◽  
Memory Devices ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric
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