Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications

N. Mohankumar; Binit Syamal; C.K. Sarkar

doi:10.1016/j.microrel.2009.06.006

Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications

Microelectronics Reliability ◽

10.1016/j.microrel.2009.06.006 ◽

2009 ◽

Vol 49 (12) ◽

pp. 1491-1497 ◽

Cited By ~ 27

Author(s):

N. Mohankumar ◽

Binit Syamal ◽

C.K. Sarkar

Keyword(s):

Double Gate ◽

Rf Applications ◽

Dual Material

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A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for analog/RF applications

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.09.028 ◽

2016 ◽

Vol 100 ◽

pp. 274-289 ◽

Cited By ~ 6

Author(s):

Vadthiya Narendar ◽

Saurabh Rai ◽

Siddharth Tiwari ◽

R.A. Mishra

Keyword(s):

Subthreshold Swing ◽

Double Gate ◽

Two Dimensional ◽

Rf Applications ◽

Dual Material

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Investigation of f t and f max in Si and Si 1– x Ge x based single and dual material double-gate Tunnel FETs for RF applications

Advances in Natural Sciences Nanoscience and Nanotechnology ◽

10.1088/2043-6262/7/2/025006 ◽

2016 ◽

Vol 7 (2) ◽

pp. 025006 ◽

Cited By ~ 1

Author(s):

M Pown ◽

B Lakshmi

Keyword(s):

Double Gate ◽

Rf Applications ◽

Tunnel Fets ◽

Dual Material

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Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

2018 3rd International Conference for Convergence in Technology (I2CT) ◽

10.1109/i2ct.2018.8529418 ◽

2018 ◽

Author(s):

Sanjay Kumar ◽

Kamlaksha Baral ◽

Sweta Chander ◽

P. K. Singh ◽

Kunal Singh ◽

...

Keyword(s):

Drain Current ◽

Double Gate ◽

Interface Charges ◽

Tunnel Fets ◽

Dual Material

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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A novel analytical approach to optimize the work functions of dual-material double-gate Tunneling-FETs

Superlattices and Microstructures ◽

10.1016/j.spmi.2018.12.016 ◽

2019 ◽

Vol 126 ◽

pp. 63-71 ◽

Cited By ~ 3

Author(s):

Reza Meshkin ◽

Seyed Ali Sedigh Ziabari ◽

Ahmad Rezaee Jordehi

Keyword(s):

Analytical Approach ◽

Double Gate ◽

Work Functions ◽

Gate Tunneling ◽

Dual Material

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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2656630 ◽

2017 ◽

Vol 64 (3) ◽

pp. 960-968 ◽

Cited By ~ 72

Author(s):

Sanjay Kumar ◽

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Prince Kumar Singh ◽

...

Keyword(s):

Analytical Modeling ◽

Gate Oxide ◽

Double Gate ◽

Electrical Characteristics ◽

Oxide Structure ◽

Dual Material

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Performance Scrutiny of Source and Drain-Engineered Dual-Material Double-Gate (DMDG) SOI MOSFET with Various High-K

Advances in Intelligent Systems and Computing - Intelligent Engineering Informatics ◽

10.1007/978-981-10-7566-7_53 ◽

2018 ◽

pp. 533-539

Author(s):

Himanshu Yadav ◽

R. K. Chauhan

Keyword(s):

Double Gate ◽

Soi Mosfet ◽

High K ◽

Dual Material

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Cited By ~ 1

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Gate Stack ◽

High K ◽

Double Gate Mosfet ◽

Dual Material

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Analytical modelling of dielectric engineered strained dual‐material double‐gate‐tunnelling field effect transistor

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2018.5293 ◽

2019 ◽

Vol 13 (7) ◽

pp. 1039-1048 ◽

Cited By ~ 1

Author(s):

Dinesh Kumar Dash ◽

Priyanka Saha ◽

Subir Kumar Sarkar

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Analytical Modelling ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs

Silicon ◽

10.1007/s12633-021-01327-6 ◽

2021 ◽

Author(s):

Himanshi Awasthi ◽

Vaibhav Purwar ◽

Abhinav Gupta

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Subthreshold Current ◽

Dual Material

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