Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures

2007 ◽  
Vol 47 (4-5) ◽  
pp. 726-728 ◽  
Author(s):  
I.P. Tyagulskyy ◽  
I.N. Osiyuk ◽  
V.S. Lysenko ◽  
A.N. Nazarov ◽  
S. Hall ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Cryogenic Temperatures

Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures

2014 ◽  
Vol 61 (2) ◽  
pp. 55-59
Author(s):  
I. P. Tyagulskyy ◽  
S. I. Tiagulskyi ◽  
A. N. Nazarov ◽  
V. S. Lysenko ◽  
P. K. Hurley ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Cryogenic Temperatures

Characterization of Contactless Integrated Photonic Probes on Silicon Waveguides at Cryogenic Temperatures

2021 ◽  
Author(s):  
Zhao Wang ◽  
Haiyi Liu ◽  
Ziyu Zhang ◽  
Kai Zou ◽  
Nan Hu ◽  
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Cryogenic Temperatures ◽  
Silicon Waveguides

Characterization of the R5912-02 MOD photomultiplier tube at cryogenic temperatures

2013 ◽  
Vol 8 (09) ◽  
pp. C09004-C09004 ◽  
Author(s):  
T Caldwell ◽  
S Seibert ◽  
S Jaditz
Keyword(s):  
Photomultiplier Tube ◽  
Cryogenic Temperatures

Characterization of 1.2 kV SiC Power MOSFETs at Cryogenic Temperatures

2018 ◽  
Author(s):  
Handong Gui ◽  
Ren Ren ◽  
Zheyu Zhang ◽  
Ruirui Chen ◽  
Jiahao Niu ◽  
...  
Keyword(s):  
Cryogenic Temperatures ◽  
Power Mosfets

Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C–V technique

2007 ◽  
Vol 47 (4-5) ◽  
pp. 508-512 ◽  
Author(s):  
Giuseppina Puzzilli ◽  
Bogdan Govoreanu ◽  
Fernanda Irrera ◽  
Maarten Rosmeulen ◽  
Jan Van Houdt
Keyword(s):  
Charge Trapping

Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme

2008 ◽  
Vol E91-C (5) ◽  
pp. 742-746 ◽  
Author(s):  
J. G. YUN ◽  
I. H. PARK ◽  
S. CHO ◽  
J. H. LEE ◽  
D.-H. KIM ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Channel Memory ◽  
Recessed Channel
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