Reliability of HTO based high-voltage gate stacks for flash memories

2007 ◽  
Vol 47 (4-5) ◽  
pp. 615-618 ◽  
Author(s):  
Yosef Raskin ◽  
Asaad Salameh ◽  
David Betel ◽  
Yakov Roizin
Keyword(s):  
High Voltage ◽  
Gate Stacks ◽  
Flash Memories ◽  
Voltage Gate

High-voltage management in single-supply CHE nor-type flash memories

2003 ◽  
Vol 91 (4) ◽  
pp. 554-568 ◽  
Author(s):  
I. Motta ◽  
G. Ragone ◽  
O. Khouri ◽  
G. Torelli ◽  
R. Micheloni
Keyword(s):  
High Voltage ◽  
Flash Memories ◽  
Voltage Management

High-voltage wordline generator for low-power program operation in NAND flash memories

2011 ◽  
Author(s):  
Sam-Kyu Won ◽  
Yujong Noh ◽  
Hyunchul Cho ◽  
Jeil Ryu ◽  
Sungwook Choi ◽  
...  
Keyword(s):  
Low Power ◽  
High Voltage ◽  
Nand Flash ◽  
Flash Memories

scholarly journals An Ultra-Low Quiescent Current Under-Voltage Lockout Circuit for a High-Voltage Gate Driver IC

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1729
Author(s):  
Kunhee Cho
Keyword(s):  
High Voltage ◽  
Supply Voltage ◽  
Voltage Sensor ◽  
Oxide Semiconductor ◽  
Portable Devices ◽  
High Side ◽  
Resistive Divider ◽  
Gate Driver ◽  
Quiescent Current ◽  
Voltage Gate

An ultra-low quiescent current under-voltage lockout (UVLO) circuit for a high-voltage gate driver integrated circuit (HVIC) is described for application in portable devices. The UVLO circuit consumes the static current in the high-side circuitry and the resistive divider used to detect the supply-voltage was the major consumer of power in the circuit. Hence, a supply-voltage sensor based on a diode-connected metal–oxide–semiconductor field-effect transistor (MOSFET) with a voltage limiter design is proposed to ensure low power consumption. Unlike the conventional UVLO design, where a resistive divider is used, the proposed structure dissipates the negligible current at a low supply-voltage and significantly reduces the static current at the nominal and high supply-voltage. The high-side quiescent current using the proposed design and the conventional designs at various supply-voltage levels are analyzed. In the proposed structure, the size of the voltage sensor is considerably smaller when compared with those in conventional designs.

A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices

2019 ◽  
Vol 104 (1) ◽  
pp. 27-36
Author(s):  
Yangyang Lu ◽  
Jing Zhu ◽  
Kongsheng Hu ◽  
Siyuan Yu ◽  
Ding Yan ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Devices ◽  
Gate Driver ◽  
Voltage Gate
Sign in / Sign up

Export Citation Format

Share Document