Characterizations of high resistivity TiNxOy thin films for applications in thin film resistors

2007 ◽  
Vol 47 (4-5) ◽  
pp. 752-754 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Soon-Gil Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Resistivity ◽  
Thin Film Resistors

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

2014 ◽  
Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Diffraction Method ◽  
Electron Back Scatter Diffraction ◽  
High Resistivity ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
The Relationship

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

scholarly journals Comparison of Arc Erosive and Laser Beam Trimming of Thin Film Resistors

1977 ◽  
Vol 4 (3-4) ◽  
pp. 179-183 ◽  
Author(s):  
Zs. Illyefalvi-Vitéz
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Beam ◽  
Measuring Method ◽  
Optimal Conditions ◽  
Current Generator ◽  
Physical Processes ◽  
Laser Beam Machining ◽  
Arc Erosion ◽  
Thin Film Resistors

The physical processes of arc erosive micromachining and the influence of trimming on the parameters of resistors have been examined, and thin film resistors without trimming are compared with those trimmed by arc erosion and laser beam machining.In the paper a theoretical model for arc erosion of thin films is proposed. The optimal conditions of arc erosive trimming are determined. The shape of the cuts are recorded and examined. The applicability of arc erosive trimming with respect to stability is proved. A measuring method is introduced for resistors trimmed by arc erosion using a direct current generator.

Short-range order in amorphous co-sputtered Ta-Al thin films

1986 ◽  
Vol 44 ◽  
pp. 860-861
Author(s):  
J.C. Barry ◽  
R.S. Timsit ◽  
D. Landheer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
High Resolution ◽  
Short Range ◽  
Short Range Order ◽  
Range Order ◽  
Transmission Electron ◽  
Thin Film Resistors ◽  
Diffraction Patterns

Tantalum-aluminium thin films have assumed considerable technological importance since the discovery in the late 1960's that the films are useful in the fabrication of thin film resistors and capacitors. It is generally claimed that these films, when prepared by co-sputtering Ta and Al, are amorphous over a range of Ta concentrations extending approximately from 15 to 75 at%, and are crystalline beyond this range. Diffuse electron diffraction patterns and ‘mottle pattern’ transmission electron micrographs are typical characteristics of the amorphous phase. In this present study we have attempted to identify any atomic short range order in the amorphous Ta-Al films and to follow the changes in this order as the Ta concentration increases across the amorphous/crystalline transition. The co-sputtered Ta-Al films of ≈100A thickness were examined in a high resolution 4000EX electron microscope (top entry, ±15°(x,y) tilt, Cs = 1.0mm ) at 400kV.

Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors

2006 ◽  
Vol 153 (2) ◽  
pp. G164 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Kwang-Min Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Tantalum Nitride ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Thin Film Resistors

Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes

2014 ◽  
Vol 1082 ◽  
pp. 30-33
Author(s):  
Bin Wang ◽  
Qian Tao Cao ◽  
Zhen Guo Song
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Anodic Oxidation ◽  
Average Power ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Thin Film Resistors ◽  
Power Capability ◽  
Sputtering System

Technologies of TaN thin-film resistors were studied, the thin films were prepared by the D.C. sputtering system, and the trimming methods of the resistor were anodic oxidation and autoxidation. We laid emphasis on the study of power capability of TaN thin film resistor in this paper. We acquired the resistors with the average power capability of 13W/mm2.

An Approach on the Use of Co-Sputtered W-DLC Thin Films as Piezoresistive Sensing Materials

2021 ◽  
Vol 14 ◽  
Author(s):  
Gabriela Leal ◽  
Humber Furlan ◽  
Marcos Massi ◽  
Mariana Amorim Fraga
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Synthesis Method ◽  
Pressure Sensors ◽  
Strain Gauges ◽  
Gauge Factor ◽  
Diamond Like Carbon ◽  
Piezoresistive Sensors ◽  
Thin Film Resistors ◽  
Lift Off

Background: Miniaturized piezoresistive sensors, particularly strain gauges, pressure sensors, and accelerometers, have been used for measurements and control applications in various fields, such as automotive, aerospace, industrial, biomedical, sports, and many more. A variety of different materials have been investigated for the development of these sensors. Among them, diamond-like carbon (DLC) thin films have emerged as one of the most promising piezoresistive sensing materials due to their excellent mechanical properties, such as high hardness and high Young’s modulus. At the same time, metal doping has been studied to enhance its electrical properties. Objective: This article explores the use of co-sputtered tungsten-doped diamond-like carbon (W-DLC) thin films as microfabricated strain gauges or piezoresistors. Methods: Different serpentine thin-film resistors were microfabricated on co-sputtered W-DLC thin films using photolithography, metallization, lift-off, and RIE (reactive ion etching) processes. In order to evaluate their piezoresistive sensing performance, gauge factor (GF) measurements were carried out at room temperature using the cantilever beam method. Results: GF values obtained in this study for co-sputtered W-DLC thin films are comparable to those reported for W-DLC films produced and characterized by other techniques, which indicates the feasibility of our approach to use them as sensing materials in piezoresistive sensors. Conclusion: W-DLC thin films produced by the co-magnetron sputtering technique can be considered as sensing materials for miniaturized piezoresistive sensors due to the following key advantages: (i) easy and well-controlled synthesis method, (ii) good piezoresistive properties exhibiting a GF higher than metals, and (iii) thin-film resistors formed by a simple microfabrication process.

scholarly journals TiNxThin-Film Resistors for Hybrid Integrated Circuits

1980 ◽  
Vol 6 (3-4) ◽  
pp. 231-233
Author(s):  
Z. Kempisty ◽  
L. Kròl-Stępniewska ◽  
W. Posadowski
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuits ◽  
Sheet Resistance ◽  
Nitrogen Atmosphere ◽  
Accelerated Ageing ◽  
Glass Substrates ◽  
Thin Film Resistors

TiNxthin-films have been evaluated for use as thin-film resistors. Thin-films were obtained by reactive triode sputtering of titanium in nitrogen atmosphere on crystallized glass substrates. In the resistiveTiNxlayers, the value ofxwas 0.96.2The value of the sheet resistance of the tested layers was 30 ohm/sq. Stability and TCR were measured during accelerated ageing.

scholarly journals Comparison of Thermal Stability of Epitaxially Grown (La0.5Sr0.5)CoO3 and (La0.6Sr0.4)MnO3 Thin Films Deposited on Si Substrate

2010 ◽  
Vol 445 ◽  
pp. 160-163
Author(s):  
Shigeki Sawamura ◽  
Naonori Sakamoto ◽  
De Sheng Fu ◽  
Kazuo Shinozaki ◽  
Hisao Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Thermal Stability Of

Thermal stability of bottom electrode thin films (La0.5Sr0.5)CoO3 (LSCO) and (La0.6Sr0.4)MnO3 (LSMO) were investigated. The crystallization and surface morphology of the heterostructure were characterized using x-ray diffraction and atomic force microscopy. Resistivity of the LSCO thin film was 25 cm. However, the resistivity of LSCO thin film increases sharply with annealing temperature. The LSMO thin film has high resistivity (100 mcm). The film does not decompose after thermal processing at 900 °C. To confirm thermal stability, we examined the effect of post annealing at various temperatures on the morphology and resistivity. Results showed that LSMO has higher thermal stability than that of LSCO.

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