Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

2007 ◽  
Vol 47 (2-3) ◽  
pp. 422-428 ◽  
Author(s):  
Z. Khatir ◽  
S. Lefebvre ◽  
F. Saint-Eve
Keyword(s):  
Failure Mode ◽  
Short Circuit ◽  
Single Chip ◽  
Numerical Investigations

Short-circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

2020 ◽  
pp. 1-1
Author(s):  
Xiaochuan Deng ◽  
Xu Li ◽  
Xuan Li ◽  
Hao Zhu ◽  
Xiaojie Xu ◽  
...  
Keyword(s):  
Failure Mode ◽  
Short Circuit

The Design of Marine 24 V DC Uninterruptible Power Supply

2014 ◽  
Vol 536-537 ◽  
pp. 1537-1541
Author(s):  
Juan Xiao
Keyword(s):  
Power Supply ◽  
Short Circuit ◽  
Battery Management ◽  
Single Chip ◽  
Uninterruptible Power Supply ◽  
Management Scheme ◽  
Ac Power ◽  
Actual Use ◽  
Emergency Power ◽  
Uninterruptible Power

A marine DC uninterruptible power supply is designed. The UPS adopts PIC16C73 single-chip microcomputer to realize the battery management. Both AC power and battery power, the output voltage stability in 23 to 24 v.Via advanced battery management, two sections of charging, equalized charging and floating charging can automatic convert and the DCUPS has many functions of protection, such as over-voltage protection ,under voltage protection and short circuit protection.The actual use on the ship and other occasions showed that the DCUPS is convenient and practical,and is more simple, reliable and longer emergency power supply than the traditional AC-DC uninterruptible power supply management scheme.

Multiple failure mode identification of SiC planar MOSFETs in short-circuit operation

2020 ◽  
Vol 114 ◽  
pp. 113804
Author(s):  
Bixuan Wang ◽  
Jingcun Liu ◽  
Wanping Li ◽  
Guogang Zhang ◽  
Yingsan Geng ◽  
...  
Keyword(s):  
Failure Mode ◽  
Short Circuit ◽  
Mode Identification ◽  
Failure Mode Identification

Analysis of Electromigration Extrusion Failure Mode in Damascene Copper Interconnects

2001 ◽  
Vol 714 ◽  
Author(s):  
Lucile Arnaud ◽  
Gérard Tartavel ◽  
Thierry Berger ◽  
François Mondon ◽  
Robert Truche
Keyword(s):  
Failure Mode ◽  
Short Circuit ◽  
Void Formation ◽  
Chemical Vapor ◽  
Diffusion Path ◽  
Operating Conditions ◽  
Copper Interconnects ◽  
Diffusion Paths ◽  
Damascene Interconnects ◽  
Mode Failure

ABSTRACTThe electromigration performance of copper damascene interconnects has been studied with respect to hillock formation and is compared to void formation failure mode. The metal lines consisted of Chemical Vapor Deposition (CVD) copper deposited on CVD TiN and capped with SiN. SiO2 was used for copper lines insulation and final passivation. Two line widths (0.5 and 3µm) have been characterized. It is shown that higher activation energy values are obtained for void formation failure mode, respectively Ea = 0.86 eV for wide lines (poly-grain microstructure) and Ea =1.04 eV for narrow lines (quasi-bamboo microstructure) than for extrusion failure mode. Failure analysis performed with a Scanning Electron Microscope (SEM) showed that grain boundaries are active diffusion paths in polycrystalline copper lines whereas interface diffusion is believed to be the main diffusion path in narrow lines. Extrusions are shown to occur at the upper interface of copper damascene lines and to extend laterally as a consequence of cracks in dielectric layers and are thus responsible for short circuit between adjacent lines. Implications on extrapolated lifetimes at operating conditions are discussed.

Estimation of the IGBT Silicon Temperature During Short-Circuit Condition in Order to Determine the Failure Mode

EPE Journal ◽  
1996 ◽  
Vol 6 (2) ◽  
pp. 25-32 ◽  
Author(s):  
F. Calmon ◽  
J.-P. Chante ◽  
A. Sénès ◽  
B. Reymond
Keyword(s):  
Failure Mode ◽  
Short Circuit ◽  
Short Circuit Condition

Internal short circuit evaluation and corresponding failure mode analysis for lithium-ion batteries

2021 ◽  
Vol 61 ◽  
pp. 269-280
Author(s):  
Lishuo Liu ◽  
Xuning Feng ◽  
Christiane Rahe ◽  
Weihan Li ◽  
Languang Lu ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Failure Mode ◽  
Short Circuit ◽  
Lithium Ion ◽  
Mode Analysis ◽  
Failure Mode Analysis ◽  
Internal Short Circuit

scholarly journals Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode

2020 ◽  
Vol 114 ◽  
pp. 113943
Author(s):  
A. Castellazzi ◽  
F. Richardeau ◽  
A. Borghese ◽  
F. Boige ◽  
A. Fayyaz ◽  
...  
Keyword(s):  
Failure Mode ◽  
Damage Accumulation ◽  
Short Circuit ◽  
Power Mosfets
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