The Impact of CMOS technology scaling on MOSFETs second breakdown: Evaluation of ESD robustness

2004 ◽  
Vol 44 (9-11) ◽  
pp. 1817-1822 ◽  
Keyword(s):  
Cmos Technology ◽  
Technology Scaling ◽  
The Impact

Impact of temperature and breakdown statistics on reliability predictions for ultrathin oxides

1999 ◽  
Vol 592 ◽  
Author(s):  
G. Groeseneken ◽  
R. Degraeve ◽  
B. Kaczer ◽  
H.E. Maes
Keyword(s):  
Oxide Thickness ◽  
Cmos Technology ◽  
Percolation Model ◽  
Strong Increase ◽  
Combined Effects ◽  
Technology Scaling ◽  
Test Methodology ◽  
Oxide Reliability ◽  
Ultrathin Oxides ◽  
The Impact

ABSTRACTThis paper discusses the evolution in the degradation and breakdown behaviour of ultra-thin oxides when scaling the oxide thickness into the sub-4 nm range for future CMOS technology generations. It will be shown that changes in the breakdown statistics, which can be explained by a percolation model for breakdown, lead to an increased area dependence of the time-tobreakdown. This has to be taken into account when predicting the oxide reliability. Also the impact of the test methodology, the relevance of a so-called polarity gap in the charge-tobreakdown and its consequences for reliability testing, are highlighted. Moreover, a strong increase in the temperature dependence of breakdown, especially for sub-3 nm oxides, is demonstrated and the impact of temperature on trap generation and critical trap density at breakdown is discussed. Finally it is shown that the combined effects of all these phenomena might lead to oxide reliability becoming a potential showstopper for further technology scaling.

Reliability of Metal Gate / High-k devices and its impact on CMOS technology scaling

MRS Advances ◽  
2017 ◽  
Vol 2 (52) ◽  
pp. 2973-2982 ◽  
Author(s):  
Andreas Kerber
Keyword(s):  
Dielectric Breakdown ◽  
Cmos Technology ◽  
Gate Stack ◽  
Leakage Currents ◽  
Technology Scaling ◽  
Device Scaling ◽  
Novel Device ◽  
Time Dependent Dielectric Breakdown ◽  
Bias Temperature Instability ◽  
High K

ABSTRACTMG/HK was introduced into CMOS technology and enabled scaling beyond the 45/32nm technology node. The change in gate stack from poly-Si/SiON to MG/HK introduced new reliability challenges like the positive bias temperature instability (PBTI) and stress induced leakage currents (SILC) in nFET devices which prompted thorough investigation to provide fundamental understanding of these degradation mechanisms and are nowadays well understood. The shift to a dual-layer gate stack also had a profound impact on the time dependent dielectric breakdown (TDDB) introducing a strong polarity dependence in the model parameter. As device scaling continues, stochastic modeling of variability, both at time zero and post stress due to BTI, becomes critical especially for SRAM circuit aging. As we migrate towards novel device architectures like bulk FinFET, SOI FinFETs, FDSOI and gate-all-around devices, impact of self-heating needs to be accounted for in reliability testing.In this paper we summarize the fundamentals of MG/HK reliability and discuss the reliability and characterization challenges related to the scaling of future CMOS technologies.

Effect of Technology Scaling on MOS Transistor Performance with High-K Gate Dielectrics

2002 ◽  
Vol 716 ◽  
Author(s):  
Nihar R. Mohapatra ◽  
Madhav P. Desai ◽  
Siva G. Narendra ◽  
V. Ramgopal Rao
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Channel Length ◽  
Mos Transistors ◽  
Short Channel ◽  
Technology Scaling ◽  
Mos Transistor ◽  
Wide Range ◽  
Impact Of Technology ◽  
The Impact

AbstractThe impact of technology scaling on the MOS transistor performance is studied over a wide range of dielectric permittivities using two-dimensional (2-D) device simulations. It is found that the device short channel performance is degraded with increase in the dielectric permittivity due to an increase in dielectric physical thickness to channel length ratio. For Kgate greater than Ksi, we observe a substantial coupling between source and drain regions through the gate dielectric. We provide extensive 2-D device simulation results to prove this point. Since much of the coupling between source and drain occurs through the gate dielectric, it is observed that the overlap length is an important parameter for optimizing DC performance in the short channel MOS transistors. The effect of stacked gate dielectric and spacer dielectric on the MOS transistor performance is also studied to substantiate the above observations.

scholarly journals The Impact of Microelectronics on High Energy Physics Innovation: The Role of 65 nm CMOS Technology on New Generation Particle Detectors

2021 ◽  
Vol 9 ◽  
Author(s):  
N. Demaria
Keyword(s):  
Particle Physics ◽  
High Energy Physics ◽  
Hadron Collider ◽  
Cmos Technology ◽  
High Energy ◽  
Main Role ◽  
Noise Power ◽  
Recent Developments ◽  
The Impact ◽  
Energy Physics

The High Luminosity Large Hadron Collider (HL-LHC) at CERN will constitute a new frontier for the particle physics after the year 2027. Experiments will undertake a major upgrade in order to stand this challenge: the use of innovative sensors and electronics will have a main role in this. This paper describes the recent developments in 65 nm CMOS technology for readout ASIC chips in future High Energy Physics (HEP) experiments. These allow unprecedented performance in terms of speed, noise, power consumption and granularity of the tracking detectors.

scholarly journals A High-Performance Skin Impedance Measurement Circuit for Biomedical Applications

2019 ◽  
Vol 28 (07) ◽  
pp. 1950110 ◽  
Author(s):  
K. Hayatleh ◽  
S. Zourob ◽  
R. Nagulapalli ◽  
S. Barker ◽  
N. Yassine ◽  
...  
Keyword(s):  
Biomedical Applications ◽  
High Performance ◽  
Impedance Measurement ◽  
Cmos Technology ◽  
Skin Impedance ◽  
Instrumentation Amplifier ◽  
Measurement Circuit ◽  
Silicon Area ◽  
The Impact ◽  
Mode Interference

This paper describes a high-performance impedance measurement circuit for the application of skin impedance measurement in the early detection of skin cancer. A CMRR improvement technique has been adopted for OTAs to reduce the impact of high-frequency common mode interference. A modified three-OTA instrumentation amplifier (IA) has been proposed to help with the impedance measurement. Such systems offer a quick, noninvasive and painless procedure, thus having considerable advantages over the currently used approach, which is based upon the testing of a biopsy sample. The sensor has been implemented in 65[Formula: see text]nm CMOS technology and post-layout simulations confirm the theoretical claims we made and sensor exhibits sensitivity. Circuit consumes 45[Formula: see text]uW from 1.5[Formula: see text]V power supply. The circuit occupies 0.01954[Formula: see text]mm2 silicon area.

scholarly journals Impact of Fluid Flow on CMOS-MEMS Resonators Oriented to Gas Sensing

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4663
Author(s):  
Rafel Perello-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Fluid Flow ◽  
Gas Sensing ◽  
Low Cost ◽  
Cmos Technology ◽  
Monolithically Integrated ◽  
Impact Reduction ◽  
Mems Resonators ◽  
Cmos Mems ◽  
Outstanding Result ◽  
The Impact

Based on experimental data, this paper thoroughly investigates the impact of a gas fluid flow on the behavior of a MEMS resonator specifically oriented to gas sensing. It is demonstrated that the gas stream action itself modifies the device resonance frequency in a way that depends on the resonator clamp shape with a corresponding non-negligible impact on the gravimetric sensor resolution. Results indicate that such an effect must be accounted when designing MEMS resonators with potential applications in the detection of volatile organic compounds (VOCs). In addition, the impact of thermal perturbations was also investigated. Two types of four-anchored CMOS-MEMS plate resonators were designed and fabricated: one with straight anchors, while the other was sustained through folded flexure clamps. The mechanical structures were monolithically integrated together with an embedded readout amplifier to operate as a self-sustained fully integrated oscillator on a commercial CMOS technology, featuring low-cost batch production and easy integration. The folded flexure anchor resonator provided a flow impact reduction of 5× compared to the straight anchor resonator, while the temperature sensitivity was enhanced to −115 ppm/°C, an outstanding result compared to the −2403 ppm/°C measured for the straight anchored structure.

A Study on Scalability and Variation of CMOS Low Noise Amplifier in Advance CMOS Technology Processes

2016 ◽  
Vol 833 ◽  
pp. 135-139
Author(s):  
Dayang Nur Salmi Dharmiza Awang Salleh ◽  
Rohana Sapawi
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Rf Circuits ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Oxide Semiconductor ◽  
Technology Scaling ◽  
Wireless Applications ◽  
Noise Amplifier ◽  
Technology Processes

Recent technology requires multistandard Radio Frequency (RF) chips for multipurpose wireless applications. In RF circuits, a low-noise amplifier (LNA) plays the key role in determining the receiver’s performance. With CMOS technology scaling, various designs has been adopted to study circuit’s characteristic and variation. In this paper, we present the results of scalable wideband LNA design based on complementary metal oxide semiconductor (CMOS), with its variance study. The design was fabricated in 180nm, 90nm, 65nm and 40nm CMOS technology.

The Impact of Technology Scaling for RF Complementary Metal–Oxide–Semiconductor

2009 ◽  
Vol 48 (1) ◽  
pp. 011208
Author(s):  
Eiji Morifuji ◽  
Hideki Kimijima ◽  
Kenji Kojima ◽  
Masaaki Iwai ◽  
Fumitomo Matsuoka
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Technology Scaling ◽  
Impact Of Technology ◽  
The Impact
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