Role of carrier depletion effects and material properties in advanced microscale thermal modeling of N-GaInP–Si/p-GaAs–C heterojunction bipolar transistor (HBT) devices

2004 ◽  
Vol 44 (7) ◽  
pp. 1061-1068 ◽  
Author(s):  
Satbir S Madra
Keyword(s):  
Material Properties ◽  
Thermal Modeling ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Zinc Diffusion in GaAs-AIGaAs Heterojunction Bipolar Transistor Structures

1990 ◽  
Vol 198 ◽  
Author(s):  
W. S. Hobson ◽  
S. J. Pearton ◽  
A. S. Jordan
Keyword(s):  
Surface Layer ◽  
Bipolar Transistor ◽  
Recent Model ◽  
Heterojunction Bipolar Transistor ◽  
Organometallic Vapor Phase Epitaxy ◽  
Base Region ◽  
Zn Diffusion ◽  
Si Doping ◽  
Zinc Diffusion

ABSTRACTWe have examined the diffusion of Zn from the base of GaAs-AIGaAs heterojunction bipolar transistor (HBT) structures during growth by organometallic vapor phase epitaxy. The role of Si doping in the emitter-contact, emitter, and collector/subcollector in enhancing the Zn diffusion has been determined by separately doping each layer. For a growth temperature of 675°C Zn shows no observable redistribution up to concentrations of 3x1019 cm−3 without Si doping. The addition of Si to the adjacent AIGaAs emitter and GaAs collector/subcollector layers causes significant diffusion from the base, while Si doping of the GaAs emitter-contact results in even greater Zn redistribution. Silicon counter-doping in the base region retards the Zn diffusion. These results are consistent with a recent model which shows that the n-type surface layer enhances the formation of gallium interstitials which diffuse into the structure and displace the Zn in the base via a kick-out mechanism.

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC

1990 ◽  
Vol 26 (2) ◽  
pp. 122 ◽  
Author(s):  
J. Akagi ◽  
Y. Kuriyama ◽  
K. Morizuka ◽  
M. Asaka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Decision Circuit

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

The role of gas flow distributions on CO2 mineralization within monolithic cemented composites: coupled CFD-factorial design approach

2021 ◽  
Author(s):  
Iman Mehdipour ◽  
Gabriel Falzone ◽  
Dale Prentice ◽  
Narayanan Neithalath ◽  
Dante Simonetti ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Factorial Design ◽  
Material Properties ◽  
Gas Flow ◽  
Design Approach ◽  
Processing Conditions ◽  
Gas Processing ◽  
Co2 Mineralization

Optimizing the spatial distribution of contacting gas and the gas processing conditions enhances CO2 mineralization reactions and material properties of carbonate-cementitious monoliths.

scholarly journals Ballistic two-dimensional lateral heterojunction bipolar transistor

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Leonardo Lucchesi ◽  
Gaetano Calogero ◽  
Gianluca Fiori ◽  
Giuseppe Iannaccone
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Two Dimensional
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