A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas

2007 ◽  
Vol 38 (1) ◽  
pp. 125-129 ◽  
Author(s):  
Hyun-Kyu Ryu ◽  
Yil-Wook Kim ◽  
Kangtaek Lee ◽  
CheeBurm Shin ◽  
Chang-Koo Kim
Keyword(s):  
Aspect Ratio ◽  
Comparative Study ◽  
High Aspect Ratio

A comparative study of nonlinear aeroelastic models for high aspect ratio wings

2019 ◽  
Vol 85 ◽  
pp. 249-274 ◽  
Author(s):  
Amir Hossein Modaress-Aval ◽  
Firooz Bakhtiari-Nejad ◽  
Earl H. Dowell ◽  
David A. Peters ◽  
Hossein Shahverdi
Keyword(s):  
Aspect Ratio ◽  
Comparative Study ◽  
High Aspect Ratio

scholarly journals Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

2020 ◽  
Vol 11 ◽  
pp. 966-975
Author(s):  
Elena I Monaico ◽  
Eduard V Monaico ◽  
Veaceslav V Ursaki ◽  
Shashank Honnali ◽  
Vitalie Postolache ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Comparative Study ◽  
High Aspect Ratio ◽  
Electrochemical Etching ◽  
Aqueous Electrolytes ◽  
Porous Structures ◽  
Triangular Shape ◽  
Gaas Nanowires ◽  
One Step

A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO3 electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 µm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated.

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