Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric
2011 ◽
Vol 88
(7)
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pp. 1095-1097
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2014 ◽
2009 ◽
Vol 30
(5)
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pp. 523-525
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2016 ◽
Vol 55
(5)
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pp. 056502
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2000 ◽
Vol 338-342
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pp. 1603-1608
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