Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

2011 ◽  
Vol 88 (7) ◽  
pp. 1357-1360 ◽  
Author(s):  
M.A. Pampillón ◽  
P.C. Feijoo ◽  
E. San Andrés ◽  
M. Toledano-Luque ◽  
A. del Prado ◽  
...  
Keyword(s):  
Rare Earth ◽  
Metal Electrode ◽  
Electrode Interface

Tunable Exciton Dissociation at the Organic/Metal Electrode Interface

2015 ◽  
Vol 119 (13) ◽  
pp. 7039-7046 ◽  
Author(s):  
Xiaoqing Chen ◽  
Zeshang He ◽  
Yongmao Hu ◽  
Yun He ◽  
Huan Peng ◽  
...  
Keyword(s):  
Metal Electrode ◽  
Organic Metal ◽  
Exciton Dissociation ◽  
Electrode Interface

Mechanistic understanding of electrochemical plating and stripping of metal electrodes

2019 ◽  
Vol 7 (9) ◽  
pp. 4668-4688 ◽  
Author(s):  
Deepti Tewari ◽  
Partha P. Mukherjee
Keyword(s):  
Metal Electrode ◽  
Metal Electrodes ◽  
Electrode Interface ◽  
Mechanistic Understanding ◽  
Electrochemical Plating

Mechanisms driving the evolution of the metal electrode interface during plating, stripping and formation of dead metal.

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

scholarly journals The Coupling between Voltage Profiles and Mechanical Deformations in LAGP Solid Electrolyte During Li Plating and Stripping

2022 ◽  
Author(s):  
Bertan Ozdogru ◽  
Shubhankar Padwal ◽  
Batuhan Bal ◽  
Sandip Harimkar ◽  
Behrad Koohbor ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Metal Electrode ◽  
Image Correlation ◽  
Mechanical Degradation ◽  
Sudden Increase ◽  
Mechanical Fracture ◽  
Mechanical Deformations ◽  
Symmetrical Cell ◽  
Electrode Interface ◽  
Temporal And Spatial

Chemo-mechanical degradation at the solid electrolyte – Li metal electrode interface is a bottleneck to improve cycle life of all-solid state Li-metal batteries. In this study, in operando digital image correlation (DIC) measurements provided temporal and spatial resolution of the chemo-mechanical deformations in LAGP solid electrolyte during the symmetrical cell cycling. The increase in strains in the interphase layer was correlated with the overpotential. The sudden increase in strains coincides with the mechanical fracture in LAGP detected by Micro CT. This work highlights the mechanical deformations in LAGP / Li interface and its coupling with the electrochemical behavior of the battery.

Theory of Metal-Solid Electrolyte Interface

1988 ◽  
Vol 135 ◽  
Author(s):  
S.I. Kim ◽  
M. Seidl
Keyword(s):  
Solid Electrolyte ◽  
Double Layer ◽  
Numerical Solutions ◽  
Metal Electrode ◽  
Mobile Charge Carrier ◽  
Mobile Charge ◽  
Potential Of Zero Charge ◽  
Electrode Interface ◽  
Free Parameters ◽  
Dc Current

AbstractA comprehensive time independent theory of the solid electrolyte(SE)–metal electrode interface is presented, using the assumption that cations are the only mobile charge carrier in the electrolyte. The temperature and the dc current across the SE are the only free parameters for the solutions along with three intrinsic parameters which depend on the properties of the particular system. The phenomenological model of the interface double layer is based on the Gouy–Chapman–Stern model.The numerical solutions of the theory for porous tungstenzeolite system enables us to predict most of the properties in the SE system such as;the current–overpotential characteristics, the capacitances of the double layer, concentration profile in the diffusion layer, the potential profile across the interface, electrochemical exchange current, and the potential of zero charge(PZC) etc. An experimental technique to measure the PZC of SE systems has been also proposed.

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