Mechanistic understanding of electrochemical plating and stripping of metal electrodes

2019 ◽  
Vol 7 (9) ◽  
pp. 4668-4688 ◽  
Author(s):  
Deepti Tewari ◽  
Partha P. Mukherjee

Mechanisms driving the evolution of the metal electrode interface during plating, stripping and formation of dead metal.

2015 ◽  
Vol 119 (13) ◽  
pp. 7039-7046 ◽  
Author(s):  
Xiaoqing Chen ◽  
Zeshang He ◽  
Yongmao Hu ◽  
Yun He ◽  
Huan Peng ◽  
...  

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Bum-Kyu Kim ◽  
Eun-Kyoung Jeon ◽  
Ju-Jin Kim ◽  
Jeong-O Lee

To elucidate the effect of the work function on the position of the Dirac point, we fabricated graphene devices with asymmetric metal contacts. By measuring the peak position of the resistance for each pair of metal electrodes, we obtained the voltage of the Dirac pointVgDirac(V) from the gate response. We found that the position ofVgDirac(V) in the hybrid devices was significantly influenced by the type of metal electrode. The measured shifts inVgDirac(V) were closely related to the modified work functions of the metal-graphene complexes. Within a certain bias range, the Fermi level of one of the contacts aligned with the electron band and that of the other contact aligned with the hole band.


2019 ◽  
Vol 7 (31) ◽  
pp. 18442-18450 ◽  
Author(s):  
Feng Hao ◽  
Ankit Verma ◽  
Partha P. Mukherjee

Mechanistic understanding of coupled reaction kinetics, diffusive transport and electrostatic shield mediated electrodeposition stability is elucidated.


1999 ◽  
Vol 596 ◽  
Author(s):  
J. D. Baniecki ◽  
C. Parks ◽  
R. B. Laibowitz ◽  
T. M. Shaw ◽  
J. Lian ◽  
...  

AbstractWe have used electrical characterization and secondary ion mass spectroscopy (SIMS) to investigate the influence of hydrogen or deuterium (H/D) on the degradation of the electrical properties of metal/Ba0.7Sr0.3TiO3/metal (M/BSTO/M) thin film capacitors after forming gas annealing (FGA). Leakage and dielectric relaxation currents increase after FGA at temperatures as low as 23C. SIMS profiling shows that at 23C H/D diffuses through thin film metal electrodes and accumulates at electrode interfaces. The location (top or bottom electrode interface) of H/D accumulation is dependent on the type of electrodes and capacitor structure. The resulting asymmetric distribution of H/D leads to large voltage offsets in the C-V characteristic, asymmetric leakage currents, and increased dielectric relaxation currents. Possible mechanisms for increased leakage and relaxation currents after FGA are discussed.


RSC Advances ◽  
2016 ◽  
Vol 6 (39) ◽  
pp. 32454-32461 ◽  
Author(s):  
Qiang Ma ◽  
Yu Xia ◽  
Wenfang Feng ◽  
Jin Nie ◽  
Yong-Sheng Hu ◽  
...  

The functional group in the polyanion plays a key role in improving the interfacial stability of the Li metal electrode.


2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.


2013 ◽  
Vol 683 ◽  
pp. 238-241
Author(s):  
Ki Bong Han ◽  
Yong Ho Choi

Carbon nanotube has attracted great research attentions due to its outstanding electrical, physical, mechanical, chemical properties. Based on its excellent properties, the carbon nanotube is promising nanoscale material for novel electrical, mechanical, chemical, and biological devices and sensors. However, it is very difficult to control the structure of carbon nanotube during synthesis. A carbon nanotubes film has 3 dimensional structures of interwoven carbon nanotubes as well as unique properties such as transparency, flexibility and good electrical conductivity. More importantly, the properties of carbon nanotubes are ensemble averaged in this formation. In this research, we study the contact resistance between carbon nanotubes film and metal electrode. For most of electrical devices using carbon nanotubes film, it is necessary to have metal electrodes on the film for current path. A resistance at the contact lowers the electrical efficiencies of the devices. Therefore, it is important to measure and characterize the contact resistance and lower it for better efficiencies. The device demonstrated in this study using classical technique for metal contacts provides relatively reliable contact resistance measurements for carbon nanotubes film applications.


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