Study of electrochemical etch-stop for high-precision thickness control of single-crystal Si in aqueous TMAH : IPA : pyrazine solutions

2008 ◽  
Vol 85 (2) ◽  
pp. 271-277 ◽  
Author(s):  
Gwiy-Sang Chung
1989 ◽  
Vol 36 (4) ◽  
pp. 663-669 ◽  
Author(s):  
B. Kloeck ◽  
S.D. Collins ◽  
N.F. de Rooij ◽  
R.L. Smith

2006 ◽  
Vol 62 (5) ◽  
pp. i117-i119 ◽  
Author(s):  
María A. Castellanos R. ◽  
Sylvain Bernès ◽  
Marina Vega-González

A high-precision structure of tetracobalt diniobium nonaoxide, Co4Nb2O9, is presented, based on X-ray single-crystal data. The space group and cation distribution previously obtained from powder data [Bertaut, Corliss, Forrat, Aleonard & Pauthenet (1961). J. Phys. Chem. Solids, 21, 234–251] are confirmed.


Carbon ◽  
2020 ◽  
Vol 160 ◽  
pp. 107-112 ◽  
Author(s):  
Ryuichi Kato ◽  
Yuri Hatano ◽  
Naoki Kasahata ◽  
Chikara Sato ◽  
Kazu Suenaga ◽  
...  

2014 ◽  
Vol 609-610 ◽  
pp. 1020-1022
Author(s):  
Zheng Yuan Zhang ◽  
Yang Cao ◽  
Yong Mei ◽  
Jian Gen Li ◽  
Zhi Cheng Feng

The fabrication of butterfly-shape resonator is key for high precision resonator, for requiring suspend on the silicon substrate. This paper is focused on the technology of making butterfly-shape resonator. the variety of structure design can be used to make butterfly-shape resonator have been analyzed, the structure of butterfly-shape resonator is obtained, and for reducing the etch surface roughness, KOH etching conditions, such as composition, concentration, and temperature of etch solution, have been done. Combining with above testing results, the structure design and optimization KOH etching technology are obtained ,based on the technology, using the boron etch stop technique , the silicon butterfly-shape resonator has been done, it can be used effectively in the fabrication of the silicon resonant sensor.


2004 ◽  
Vol 237 (1-4) ◽  
pp. 363-368 ◽  
Author(s):  
Yasuhiro Yamauchi ◽  
Michiko Yoshitake ◽  
Weijie Song

2019 ◽  
Vol 323 (3) ◽  
pp. 1353-1358
Author(s):  
S. Pathak ◽  
P. Das ◽  
A. K. Sikdar ◽  
J. Nandi ◽  
S. Bhattacharyya ◽  
...  

2016 ◽  
Vol 1136 ◽  
pp. 350-356 ◽  
Author(s):  
Takaaki Suzuki ◽  
Toshinori Otsuki ◽  
Ji Wang Yan

Precision slicing tests were performed for single-crystal silicon by using a newly developed dicing wire saw system and diamond wires. The developed dicing wire saw enables slicing thick workpiece of hard and brittle materials which could not be sliced by conventional dicing machines. To achieve high precision and efficiency, the dicing wire saw system adopted tension control and high speed control technologies which provides a maximum wire feeding speed of 2000m/min. In this study, the diamond wire was driven in a single direction at a speed of 750-1750m/min and the slicing force, wire wear and workpiece surface roughness after slicing were investigated experimentally. The results showed that as a new slicing system, the developed dicing wire saw was useable for high-precision slicing of thick workpiece.


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