scholarly journals Low-voltage C 8 -BTBT thin-film transistors for flexible electronics

2017 ◽  
Vol 4 ◽  
pp. S232-S236 ◽  
Author(s):  
Thorsten Meyers ◽  
Fabio F. Vidor ◽  
Charlotte Puls ◽  
Ulrich Hilleringmann
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Voltage

Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics

2017 ◽  
Vol 174 ◽  
pp. 35-39 ◽  
Author(s):  
Thorsten Meyers ◽  
Fábio F. Vidor ◽  
Katharina Brassat ◽  
Jörg K.N. Lindner ◽  
Ulrich Hilleringmann
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Voltage

Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics

2010 ◽  
Vol 518 (22) ◽  
pp. 6277-6279 ◽  
Author(s):  
Kwang-Hwan Cho ◽  
Min-Gyu Kang ◽  
Seung-Min Oh ◽  
Chong-Yun Kang ◽  
YoungPak Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Zno Thin Film

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

2016 ◽  
Vol 18 (12) ◽  
pp. 8522-8528 ◽  
Author(s):  
Yun-Seo Choe ◽  
Mi Hye Yi ◽  
Ji-Heung Kim ◽  
Yun Ho Kim ◽  
Kwang-Suk Jang
Keyword(s):  
Thin Film ◽  
Maleic Anhydride ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Surface Grafting ◽  
Gate Insulators ◽  
Poly Ethylene

We report the surface grafting of octylamine onto a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator for enhancing the performance of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors.

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