High-entropy BNbTaTiZr thin film with excellent thermal stability of amorphous structure and its electrical properties

2016 ◽  
Vol 185 ◽  
pp. 456-459 ◽  
Author(s):  
Chun-Yang Cheng ◽  
Jien-Wei Yeh
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Electrical Properties ◽  
Amorphous Structure ◽  
Excellent Thermal Stability ◽  
High Entropy ◽  
Thermal Stability Of

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of PECVD W-B-N thin film as a diffusion barrier

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

Intrinsic Thermal Stability of Anisotropic Thin-Film Superconductors

1990 ◽  
Vol 112 (1) ◽  
pp. 10-15 ◽  
Author(s):  
M. I. Flik ◽  
C. L. Tien
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Stability Criterion ◽  
High Temperature Superconductors ◽  
Stability Criteria ◽  
Anisotropic Thermal Conductivity ◽  
Operating Current ◽  
Released Energy ◽  
The Stability ◽  
Thermal Stability Of

Intrinsic thermal stability denotes a situation where a superconductor can carry the operating current without resistance at all times after the occurrence of a localized release of thermal energy. This novel stability criterion is different from the cryogenic stability criteria for magnets and has particular relevance to thin-film superconductors. Crystals of ceramic high-temperature superconductors are likely to exhibit anisotropic thermal conductivity. The resultant anisotropy of highly oriented films of superconductors greatly influences their thermal stability. This work presents an analysis for the maximum operating current density that ensures intrinsic stability. The stability criterion depends on the amount of released energy, the Biot number, the aspect ratio, and the ratio of the thermal conductivities in the plane of the film and normal to it.

Improving the stabilities of organic solar cells via employing a mixed cathode buffer layer

2021 ◽  
Vol 95 (3) ◽  
pp. 30201
Author(s):  
Xi Guan ◽  
Yufei Wang ◽  
Shang Feng ◽  
Jidong Zhang ◽  
Qingqing Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Solar Cells ◽  
Mixed Layer ◽  
Organic Solar Cells ◽  
Buffer Layers ◽  
Commercial Development ◽  
Conversion Efficiencies ◽  
Thermal Stability Of ◽  
Cathode Buffer Layers

Organic solar cells (OSCs) have been fabricated using cathode buffer layers based on bathocuproine (BCP) and 4,4'-N,N'-dicarbazole-biphenyl (CBP). It is found that despite nearly same power conversion efficiencies, the bilayer of BCP/CBP shows increased thermal stability of device than the monolayer of BCP, mostly because upper CBP thin film stabilizes under BCP thin film. The mixed layer of BCP:CBP gives slightly decreased efficiency than BCP and BCP/CBP, mostly because the electron mobility of the OSC using BCP:CBP is decreased than those using BCP and BCP/CBP. However, the BCP:CBP increases thermal stability of device than BCP and BCP/CBP, ascribed to that the BCP and CBP effectively inhibit reciprocal tendencies of crystallizations in the mixed layer. Moreover, the BCP:CBP improves the light stability of device than the BCP and BCP/CBP, because the energy transfer from BCP to CBP in in the mixed layer effectively decelerates the photodegradation of BCP. We provide a facial method to improve the stabilities of cathode buffer layers against heat and light, beneficial to the commercial development of OSCs.

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