Ba0.6Sr0.4TiO3–Bi1.5Mg1.0Nb1.5O7 composite thin film capacitors with enhanced tunable performance for tunable device applications

Materials Letters ◽

10.1016/j.matlet.2015.09.032 ◽

2015 ◽

Vol 161 ◽

pp. 517-519 ◽

Cited By ~ 3

Author(s):

Shihui Yu ◽

Lingxia Li ◽

Haoran Zheng ◽

Zheng Sun ◽

Weifeng Zhang

Keyword(s):

Thin Film ◽

Composite Thin Film ◽

Thin Film Capacitors ◽

Tunable Device ◽

Device Applications

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Leakage Current Characteristics of Lead-Zirconate-Titanate Thin Film Capacitors for Memory Device Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.4056 ◽

1998 ◽

Vol 37 (Part 1, No. 7A) ◽

pp. 4056-4060 ◽

Cited By ~ 31

Author(s):

Hong-ming Chen ◽

Sheng-wei Tsaur ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Leakage Current ◽

Lead Zirconate Titanate ◽

Memory Device ◽

Lead Zirconate ◽

Zirconate Titanate ◽

Thin Film Capacitors ◽

Device Applications ◽

Current Characteristics ◽

Titanate Thin Film

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Thickness-Dependent Electrical Properties of Pb(Zr, Ti)O[sub 3] Thin Film Capacitors for Memory Device Applications

Journal of The Electrochemical Society ◽

10.1149/1.1393194 ◽

2000 ◽

Vol 147 (1) ◽

pp. 326 ◽

Cited By ~ 12

Author(s):

T. K. Kundu ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Memory Device ◽

Thin Film Capacitors ◽

Device Applications

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Ionomer Composite Thin Film Capacitors

IEEE Transactions on Components Packaging and Manufacturing Technology ◽

10.1109/tcpmt.2011.2106127 ◽

2011 ◽

Vol 1 (9) ◽

pp. 1305-1310 ◽

Cited By ~ 2

Author(s):

Clinton K. Landrock ◽

Bozena Kaminska

Keyword(s):

Thin Film ◽

Composite Thin Film ◽

Thin Film Capacitors

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Erratum: “An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications” [Appl. Phys. Lett. 69, 4011 (1996)]

Applied Physics Letters ◽

10.1063/1.119268 ◽

1997 ◽

Vol 70 (8) ◽

pp. 1058-1058

Author(s):

Jia-lin Chen ◽

Hong-ming Chen ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Lead Zirconate Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Lead Zirconate ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Thin Film Capacitors ◽

Device Applications ◽

Titanate Thin Film

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The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications

Journal of Applied Physics ◽

10.1063/1.372100 ◽

2000 ◽

Vol 87 (4) ◽

pp. 1841-1843 ◽

Cited By ~ 48

Author(s):

Yung-Bin Lin ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Memory Device ◽

Conduction Current ◽

Thin Film Capacitors ◽

Device Applications

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An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications

Applied Physics Letters ◽

10.1063/1.117854 ◽

1996 ◽

Vol 69 (26) ◽

pp. 4011-4013 ◽

Cited By ~ 28

Author(s):

Jia‐lin Chen ◽

Hong‐ming Chen ◽

Joseph Ya‐min Lee

Keyword(s):

Thin Film ◽

Lead Zirconate Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Lead Zirconate ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Thin Film Capacitors ◽

Device Applications ◽

Titanate Thin Film

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Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications

Journal of Applied Physics ◽

10.1063/1.368765 ◽

1998 ◽

Vol 84 (9) ◽

pp. 5155-5157 ◽

Cited By ~ 18

Author(s):

Shu-chun Huang ◽

Hong-ming Chen ◽

Shich Chuan Wu ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Barium Strontium Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Barium Strontium ◽

Thin Film Capacitors ◽

Device Applications ◽

Titanate Thin Film

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Asymmetric properties of Pb(Zr,Ti)O3 thin film capacitors with conducting oxides

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1998918 ◽

1998 ◽

Vol 08 (PR9) ◽

pp. Pr9-109-Pr9-112 ◽

Cited By ~ 3

Author(s):

C. H. Choi ◽

J. Lee

Keyword(s):

Thin Film ◽

Conducting Oxides ◽

Thin Film Capacitors

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Electrical and microstructure characteristics of SU8–Cu composite thin film fabricated using femtosecond laser direct writing

Applied Physics A ◽

10.1007/s00339-020-03531-4 ◽

2020 ◽

Vol 126 (5) ◽

Author(s):

Poh Yin Chong ◽

Jeng-Rong Ho

Keyword(s):

Thin Film ◽

Femtosecond Laser ◽

Composite Thin Film ◽

Direct Writing ◽

Laser Direct Writing ◽

Microstructure Characteristics

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Ternary CuO:SnO2:ZnO (1:1:1) composite thin film for room temperature gas sensor application

Optik ◽

10.1016/j.ijleo.2021.166615 ◽

2021 ◽

Vol 234 ◽

pp. 166615

Author(s):

S.R. Cynthia ◽

R. Sivakumar ◽

C. Sanjeeviraja

Keyword(s):

Thin Film ◽

Gas Sensor ◽

Room Temperature ◽

Composite Thin Film ◽

Sensor Application

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