Low-frequency dielectric functions of dense and chevronic thin films of parylene C

2013 ◽  
Vol 95 ◽  
pp. 63-66 ◽  
Author(s):  
Abdelkader Kahouli ◽  
Lai Wei ◽  
Akhlesh Lakhtakia ◽  
Alain Sylvestre
Keyword(s):  
2016 ◽  
Vol 53 ◽  
pp. 89-97 ◽  
Author(s):  
Chandraprakash Chindam ◽  
Nicole R. Brown ◽  
Akhlesh Lakhtakia ◽  
Osama O. Awadelkarim ◽  
Wasim Orfali

2017 ◽  
Vol 704 ◽  
pp. 676-682 ◽  
Author(s):  
Kang Sun ◽  
Ling-Fang Xu ◽  
Cong Mao ◽  
Xing Feng ◽  
Jia-Yu Liang ◽  
...  

1994 ◽  
Vol 48 (6) ◽  
pp. 733-736 ◽  
Author(s):  
N. T. McDevitt ◽  
J. S. Zabinski ◽  
M. S. Donley ◽  
J. E. Bultman

Crystalline disorder in thin films plays an important role in determining their properties. Disorder in the crystal structure of MoS2 films prepared by magnetron sputtering and pulsed laser deposition was evaluated with the use of Raman spectroscopy. The peak positions and bandwidths of the first-order Raman bands, in the region 100 to 500 cm−1, were used as a measure of crystalline order. In addition, a low-frequency feature was observed at 223 cm−1 that is not part of the normal first-order spectrum of a fully crystalline specimen. Data presented here demonstrate that this band is characteristic of crystalline disorder, and its intensity depends on the annealing history of the film. This behavior seems to be analogous to the disorder found in graphite thin films.


2019 ◽  
Vol 61 (9) ◽  
pp. 2206-2209
Author(s):  
C. Chandraprakash ◽  
Vijayakumar C. Venugopal ◽  
Akhlesh Lakhtakia ◽  
Osama O. Awadelkarim

1993 ◽  
Author(s):  
Sisi Jiang ◽  
Peter Hallemeier ◽  
Charles Surya ◽  
Julia M. Phillips

2000 ◽  
Vol 623 ◽  
Author(s):  
R.K. Soni ◽  
Anju Dixit ◽  
R. S. Katiyar ◽  
A. Pignolet ◽  
K.M. Satyalakshmi ◽  
...  

AbstractLight scattering investigations are carried out on BaBi4Ti4O15 (BBiT) which is a member of the Bi-layer structure ferroelectric oxide with n = 4. The BBiT thin films, thickness ∼ 300 nm, were grown on epitaxial conducting LaNiO3 electrodes on epitaxial buffer layers on (100) silicon by pulsed laser deposition. Micro-Raman measurements performed on these films reveal a sharp low-frequency mode at 51 cm−1 along with broad highfrequeficy modes corresponding to other lattice vibrations including TiO6 octahedra. No temperature dependence of the low frequency mode is seen while a weak dependence of the broad high frequency vibrations are observed in the mixed oriented regions. Raman polarization carried out at room temperature indicates that the prominent modes have Alg and Eg symmetries in the BaBi4Ti4O15 thin films.


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