Photovoltaic properties of BiFeO3 thin film capacitors by using Al-doped zinc oxide as top electrode

2013 ◽  
Vol 91 ◽  
pp. 359-361 ◽  
Author(s):  
Wen Dong ◽  
Yiping Guo ◽  
Bing Guo ◽  
Hongyan Liu ◽  
Hua Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Bifeo3 Thin Film ◽  
Photovoltaic Properties ◽  
Thin Film Capacitors

Preparation of La-doped BiFeO3 Thin Film and Its Photovoltaic Properties

2013 ◽  
Vol 28 (4) ◽  
pp. 436-440 ◽  
Author(s):  
Yi-Jun XIE ◽  
Yi-Ping GUO ◽  
Wen DONG ◽  
Bing GUO ◽  
Hua LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Bifeo3 Thin Film ◽  
Photovoltaic Properties ◽  
La Doped

Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors

2008 ◽  
Vol 92 (12) ◽  
pp. 122903 ◽  
Author(s):  
Guo-Zhen Liu ◽  
Can Wang ◽  
Chun-Chang Wang ◽  
Jie Qiu ◽  
Meng He ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Interfacial Polarization ◽  
Bifeo3 Thin Film ◽  
Thin Film Capacitors

scholarly journals A Heterojunction Based on Macro-porous Silicon and Zinc Oxide for Solar Cell Application

2015 ◽  
Vol 18 (4) ◽  
pp. 225-230 ◽  
Author(s):  
N. Mendoza-Agüero ◽  
V. Agarwal ◽  
H. I. Villafán-Vidales ◽  
J. Campos-Alvarez ◽  
P. J. Sebastian
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Solar Cell ◽  
Porous Silicon ◽  
Electrical Response ◽  
Low Cost ◽  
Photovoltaic Performance ◽  
Buffer Layers ◽  
Photovoltaic Properties ◽  
Solar Cell Application

Transparent and conductive Al doped zinc oxide (AZO) films were reactively sputtered from metallic targets onto macro-porous silicon (MPS) substrate to fabricate a heterojunction interface structure. A tungsten oxide (WO3) thin film was placed between metallic aluminum back contact and bulk silicon to extract photogenerated holes from the absorber. Due to the susceptibility of PS to naturally oxidize over the period of time, a thin film of SiO2 was thermally grown to stabilize the electrical response of the junction. Such thin layer acts as passive film to prevent recombination and is placed between the p-n junction. Photovoltaic properties of this heterojunction were studied by using the current density-voltage (J-V) measurement under AM 1.5 illumination. The experimental results show an increase in photovoltaic performance of AZO/MPS solar cell with a buffer layers of WO3. Such heterostructures are promising for the development of the low-cost, clean, and durable devices with appreciable light-to-electricity conversion efficiency.

Photovoltaic properties of Pt/BiFeO3 thin film/fluorine-doped tin oxide capacitor

2014 ◽  
Vol 72 (1) ◽  
pp. 74-79 ◽  
Author(s):  
Yin’e Zhou ◽  
Benfang Yu ◽  
Xiaoyan Zhu ◽  
Xinyu Tan ◽  
Lihua Qian ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Bifeo3 Thin Film ◽  
Photovoltaic Properties

Ferroelectric photovoltaic properties of Ce and Mn codoped BiFeO3 thin film

2014 ◽  
Vol 115 (1) ◽  
pp. 014102 ◽  
Author(s):  
Surbhi Gupta ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Bifeo3 Thin Film ◽  
Photovoltaic Properties

A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

2011 ◽  
Vol 23 (10) ◽  
pp. 1277-1281 ◽  
Author(s):  
An Quan Jiang ◽  
Can Wang ◽  
Kui Juan Jin ◽  
Xiao Bing Liu ◽  
James F. Scott ◽  
...  
Keyword(s):  
Thin Film ◽  
Bifeo3 Thin Film ◽  
Resistive Memory ◽  
Thin Film Capacitors

Switchable diode-effect mechanism in ferroelectric BiFeO3 thin film capacitors

2015 ◽  
Vol 118 (11) ◽  
pp. 114101 ◽  
Author(s):  
Hiroki Matsuo ◽  
Yuuki Kitanaka ◽  
Ryotaro Inoue ◽  
Yuji Noguchi ◽  
Masaru Miyayama
Keyword(s):  
Thin Film ◽  
Bifeo3 Thin Film ◽  
Effect Mechanism ◽  
Thin Film Capacitors ◽  
Switchable Diode Effect
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