Fabrication of carbon nanoneedle and carbon nanowall mixture film with two-step growth method

2011 ◽  
Vol 65 (1) ◽  
pp. 78-81 ◽  
Author(s):  
Hong-Xing Wang ◽  
Nan Jiang ◽  
Hui Zhang ◽  
Akio Hiraki ◽  
Ren An Bu
Keyword(s):  
Growth Method ◽  
Step Growth ◽  
Mixture Film

scholarly journals Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 823
Author(s):  
Shizheng Yang ◽  
Hongliang Lv ◽  
Likun Ai ◽  
Fangkun Tian ◽  
Silu Yan ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Wafer Level ◽  
X Ray Diffraction ◽  
Nucleation Layer ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Growth Method ◽  
Step Growth ◽  
Microscopy Images

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

Phase Control of Ga2O3 Thin Films Grown by Metal-Organic Chemical Vapor Deposition

2019 ◽  
Vol 954 ◽  
pp. 72-76
Author(s):  
Ze Qi Li ◽  
Zi Min Chen ◽  
Wei Qu Chen ◽  
Gang Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Flow Rates ◽  
Growth Method ◽  
Metal Organic ◽  
Step Growth ◽  
Organic Chemical Vapor Deposition

In this paper, Ga2O3 thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). There was phase transition for samples grown with different flow rates of triethyl-gallium (TEGa) and deionized water (H2O). It is found that ε-Ga2O3 is difficult to coalesce and the phase mixture by β­Ga2O3 takes place if the flow rates of TEGa and H2O are too high. However, by using multiple-step growth method, the film became fully coalesced. High-quality ε-Ga2O3 thin film with atomically flat surface and multilayer morphology was obtained.

Raman Mapping and Finite Element Analysis of Epitaxial Lateral Overgrown GaN on Sapphire Substrates

2002 ◽  
Vol 743 ◽  
Author(s):  
M. Benyoucef ◽  
M. Kuball ◽  
B. Beaumont ◽  
V. Bousquet ◽  
P. Gibart
Keyword(s):  
Finite Element ◽  
Growth Stress ◽  
Fe Analysis ◽  
Stress Fields ◽  
Raman Mapping ◽  
Element Analysis ◽  
Stress Variation ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTUsing micro-Raman scattering and finite element (FE) analysis, stress fields in epitaxial lateral overgrown (ELO) GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates using a two-step growth method were investigated. Nearly full stress relaxation at the top ELO GaN surface can be achieved by increasing the thickness of ELO GaN to about 50 μm. Reductions in stress variation between window and overgrown regions can be achieved by using a double ELO GaN growth at a much smaller ELO thickness. Increased compressive stress at the coalescence boundary of two adjacent wings of ELO GaN was related to the presence of voids in this area. In the double ELO growth, stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.

Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

2011 ◽  
Vol 88 (7) ◽  
pp. 1221-1224 ◽  
Author(s):  
Dong-Seok Kim ◽  
Tae-Hyeon Kim ◽  
Chul-Ho Won ◽  
Hee-Sung Kang ◽  
Ki-Won Kim ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Si Substrate ◽  
Growth Method ◽  
Step Growth

Evolution of film orientation in Y2MnCrO6 epitaxial films prepared by a two-step growth method

2015 ◽  
Vol 580 ◽  
pp. 94-100 ◽  
Author(s):  
L. Hao ◽  
Z.F. Zhang ◽  
L. Yang ◽  
X.N. Xie ◽  
Q.X. Yu ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Growth Method ◽  
Step Growth

Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method

1991 ◽  
Vol 30 (Part 1, No. 3) ◽  
pp. 454-458 ◽  
Author(s):  
Atsuki Ono ◽  
Kazuo Tsutsui ◽  
Osamu Ishiyama ◽  
Seijiro Furukawa
Keyword(s):  
Point Defects ◽  
Gaas Films ◽  
Growth Method ◽  
Step Growth
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