Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

2011 ◽  
Vol 88 (7) ◽  
pp. 1221-1224 ◽  
Author(s):  
Dong-Seok Kim ◽  
Tae-Hyeon Kim ◽  
Chul-Ho Won ◽  
Hee-Sung Kang ◽  
Ki-Won Kim ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Si Substrate ◽  
Growth Method ◽  
Step Growth

Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method

2020 ◽  
Vol 8 (47) ◽  
pp. 17025-17033
Author(s):  
Heng Zhang ◽  
Wei Wang ◽  
SenPo Yip ◽  
Dapan Li ◽  
Fangzhou Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Near Infrared ◽  
Performance Enhancement ◽  
Chemical Vapor ◽  
Infrared Photodetectors ◽  
Growth Method ◽  
Step Growth

Substantial performance enhancement of near-infrared photodetectors can be achieved by utilizing two-step chemical vapor deposition-grown InGaAs nanowires as device channels.

High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 327-330 ◽  
Author(s):  
Maki Suemitsu ◽  
Shota Sanbonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
The Other ◽  
High Rate ◽  
Si Substrate ◽  
High Quality ◽  
Si Substrates ◽  
Growth Method ◽  
Step Growth ◽  
Sic Film ◽  
Sic Films

In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

scholarly journals Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 823
Author(s):  
Shizheng Yang ◽  
Hongliang Lv ◽  
Likun Ai ◽  
Fangkun Tian ◽  
Silu Yan ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Wafer Level ◽  
X Ray Diffraction ◽  
Nucleation Layer ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Growth Method ◽  
Step Growth ◽  
Microscopy Images

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

Control of Crystal Orientation of Epitaxial Si nanowires on Si Substrate Using AAO template

2011 ◽  
Vol 1350 ◽  
Author(s):  
Tomohiro Shimizu ◽  
Qi Wang ◽  
Chonge Wang ◽  
Fumihiro Inoue ◽  
Makoto Koto ◽  
...  
Keyword(s):  
Crystal Orientation ◽  
Growth Direction ◽  
Nanowire Arrays ◽  
Si Nanowires ◽  
Aao Template ◽  
Si Substrate ◽  
Anodic Aluminum ◽  
Transmission Electron ◽  
Growth Method ◽  
Vls Growth

ABSTRACTControl of crystal orientation of vertically grown epitaxial Si (111) and (110) nanowire arrays on Si substrate has been demonstrated using a combination of an anodic aluminum oxide (AAO) template and vapor – liquid – solid (VLS) growth method. The crystal orientation of the nanowire was investigated by transmission electron microscopy. A growth direction of the nanowire arrays was guided perpendicular to the surface of the substrate by the AAO template, and the crystal orientation of the nanowire arrays was selected using the single crystal Si substrate properly cut in desired orientation.

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

Phase Control of Ga2O3 Thin Films Grown by Metal-Organic Chemical Vapor Deposition

2019 ◽  
Vol 954 ◽  
pp. 72-76
Author(s):  
Ze Qi Li ◽  
Zi Min Chen ◽  
Wei Qu Chen ◽  
Gang Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Flow Rates ◽  
Growth Method ◽  
Metal Organic ◽  
Step Growth ◽  
Organic Chemical Vapor Deposition

In this paper, Ga2O3 thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). There was phase transition for samples grown with different flow rates of triethyl-gallium (TEGa) and deionized water (H2O). It is found that ε-Ga2O3 is difficult to coalesce and the phase mixture by β­Ga2O3 takes place if the flow rates of TEGa and H2O are too high. However, by using multiple-step growth method, the film became fully coalesced. High-quality ε-Ga2O3 thin film with atomically flat surface and multilayer morphology was obtained.

Raman Mapping and Finite Element Analysis of Epitaxial Lateral Overgrown GaN on Sapphire Substrates

2002 ◽  
Vol 743 ◽  
Author(s):  
M. Benyoucef ◽  
M. Kuball ◽  
B. Beaumont ◽  
V. Bousquet ◽  
P. Gibart
Keyword(s):  
Finite Element ◽  
Growth Stress ◽  
Fe Analysis ◽  
Stress Fields ◽  
Raman Mapping ◽  
Element Analysis ◽  
Stress Variation ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTUsing micro-Raman scattering and finite element (FE) analysis, stress fields in epitaxial lateral overgrown (ELO) GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates using a two-step growth method were investigated. Nearly full stress relaxation at the top ELO GaN surface can be achieved by increasing the thickness of ELO GaN to about 50 μm. Reductions in stress variation between window and overgrown regions can be achieved by using a double ELO GaN growth at a much smaller ELO thickness. Increased compressive stress at the coalescence boundary of two adjacent wings of ELO GaN was related to the presence of voids in this area. In the double ELO growth, stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.

Evolution of film orientation in Y2MnCrO6 epitaxial films prepared by a two-step growth method

2015 ◽  
Vol 580 ◽  
pp. 94-100 ◽  
Author(s):  
L. Hao ◽  
Z.F. Zhang ◽  
L. Yang ◽  
X.N. Xie ◽  
Q.X. Yu ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Growth Method ◽  
Step Growth
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