Thickness and temperature effects on electrical resistivity of (Bi0.5Sb0.5)2Te3 thin films

2006 ◽  
Vol 60 (17-18) ◽  
pp. 2059-2065 ◽  
Author(s):  
P.G. Ganesan ◽  
V. Damodara Das
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Temperature Effects

scholarly journals Thickness dependent electrical resistivity modulation in tensile-strained epitaxial thin films of calcium manganese oxide

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045124
Author(s):  
Cacie Hart ◽  
Zoey Warecki ◽  
Grace Yong ◽  
David Houston ◽  
Rajeswari Kolagani
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Manganese Oxide ◽  
Epitaxial Thin Films

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Electrical resistivity and its thermal coefficient of TiW alloy thin films prepared by two different sputtering systems

2014 ◽  
Vol 11 (9-10) ◽  
pp. 1423-1426 ◽  
Author(s):  
Yutaka Sakurai ◽  
Yuya Takeda ◽  
Shinji Ikeda ◽  
Yoshinori Sakamoto
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Thermal Coefficient

Substrate temperature effects on the growth and properties of γ-MnS thin films grown by rf sputtering

2002 ◽  
Vol 37 (10) ◽  
pp. 1749-1754 ◽  
Author(s):  
I Oidor-Juárez ◽  
P Garcı́a-Jiménez ◽  
G Torres-Delgado ◽  
R Castanedo-Pérez ◽  
O Jiménez-Sandoval ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Temperature Effects ◽  
Rf Sputtering

High Temperature Effects in Li-Doped ZnO Thin Films

2004 ◽  
Vol 63 (1) ◽  
pp. 209-213 ◽  
Author(s):  
A. DEYNEKA ◽  
Z. HUBICKA ◽  
M. CADA ◽  
G. SUCHANECK ◽  
M. SAVINOV ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Temperature Effects ◽  
Zno Thin Films ◽  
Doped Zno
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