Effect of reactive gases flow ratios on the microstructure and electrical resistivity of Ta–N–O thin films by reactive co-sputtering

2011 ◽  
Vol 519 (15) ◽  
pp. 5099-5102 ◽  
Author(s):  
C.K. Chung ◽  
T.S. Chen ◽  
N.W. Chang
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Reactive Gases

scholarly journals Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

2017 ◽  
Vol 35 (1) ◽  
pp. 173-180 ◽  
Author(s):  
A. Kavitha ◽  
R. Kannan ◽  
S. Rajashabala
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Dc Magnetron Sputtering ◽  
Target Power ◽  
Reactive Gases ◽  
Hot Filament ◽  
Diode Mode

AbstractThe present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).

scholarly journals Thickness dependent electrical resistivity modulation in tensile-strained epitaxial thin films of calcium manganese oxide

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045124
Author(s):  
Cacie Hart ◽  
Zoey Warecki ◽  
Grace Yong ◽  
David Houston ◽  
Rajeswari Kolagani
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Manganese Oxide ◽  
Epitaxial Thin Films

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Electrical resistivity and its thermal coefficient of TiW alloy thin films prepared by two different sputtering systems

2014 ◽  
Vol 11 (9-10) ◽  
pp. 1423-1426 ◽  
Author(s):  
Yutaka Sakurai ◽  
Yuya Takeda ◽  
Shinji Ikeda ◽  
Yoshinori Sakamoto
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Thermal Coefficient

scholarly journals Pressure-induced monotonic enhancement of Tc to over 30 K in the superconducting Pr0.82Sr0.18NiO2 thin films

2021 ◽  
Author(s):  
Ningning Wang ◽  
Mingwei Yang ◽  
Keyu Chen ◽  
Zhen Yang ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pressure Effect ◽  
Ambient Pressure ◽  
Strain Engineering ◽  
Superconducting Properties ◽  
Liquid Pressure ◽  
Infinite Layer ◽  
Effect Of Pressure ◽  
First Time

Abstract The successful synthesis of superconducting nickelate thin films with the highest Tc ~ 15 K has reignited great enthusiasms on this class of potential analogue to high-Tc cuprates suggested decades ago. To pursue higher Tc is always an important task in studying new superconductors. Here we report for the first time the effect of pressure on the superconducting properties of infinite-layer Pr0.82Sr0.18NiO2 thin films by measuring electrical resistivity under various pressures in a cubic anvil cell apparatus. We find that the onset of superconductivity, Tconset, can be enhanced monotonically from ~ 18 K at ambient pressure to ~ 31 K without showing signatures of saturation upon increasing pressure to 12.1 GPa in the presence of liquid pressure transmitting medium. This encouraging result indicates that the Tc of infinite-layer nickelates superconductors can be further raised up by applying higher pressures or strain engineering in the heterostructure films. In addition to the pressure effect, we also discussed the influence of stress/strain on the superconducting properties of the nickelate thin films.

Electrical resistivity of ytterbium thin films

1973 ◽  
Vol 18 (1) ◽  
pp. 71-75 ◽  
Author(s):  
B.M.S. Bist ◽  
O.N. Srivastava
Keyword(s):  
Thin Films ◽  
Electrical Resistivity
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